中国物理B ›› 2005, Vol. 14 ›› Issue (9): 1900-1903.doi: 10.1088/1009-1963/14/9/039

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Theoretical analysis of nanosecond crystallization kinetics of phase-change optical recording films

张学如, 杨昆, 宋瑛林   

  1. Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2004-09-29 修回日期:2005-03-14 出版日期:2005-09-20 发布日期:2005-09-20
  • 基金资助:
    Project supported by the Natural Science Foundation of Heilongjiang Province, China and the Foundation of Harbin Institute of Technology, China.

Theoretical analysis of nanosecond crystallization kinetics of phase-change optical recording films

Zhang Xue-Ru (张学如), Yang Kun (杨昆), Song Ying-Lin (宋瑛林)   

  1. Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • Received:2004-09-29 Revised:2005-03-14 Online:2005-09-20 Published:2005-09-20
  • Supported by:
    Project supported by the Natural Science Foundation of Heilongjiang Province, China and the Foundation of Harbin Institute of Technology, China.

摘要: A theoretical investigation of nanosecond crystallization kinetics of the phase-change optical recording films is presented. An extended Kissinger equation for the square-root heating is derived, which properly describes the temperature evolution of the films by nanosecond laser heating. The extended Kissinger equation was used to explain our previous experimental results.

Abstract: A theoretical investigation of nanosecond crystallization kinetics of the phase-change optical recording films is presented. An extended Kissinger equation for the square-root heating is derived, which properly describes the temperature evolution of the films by nanosecond laser heating. The extended Kissinger equation was used to explain our previous experimental results.

Key words: phase-change, crystallization kinetics, activation energy

中图分类号:  (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

  • 81.40.Ef
64.70.D- (Solid-liquid transitions) 61.43.Dq (Amorphous semiconductors, metals, and alloys) 68.60.Dv (Thermal stability; thermal effects)