中国物理B ›› 2005, Vol. 14 ›› Issue (6): 1255-1258.doi: 10.1088/1009-1963/14/6/035

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SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

吕政, 陈治明, 蒲红斌   

  1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048
  • 收稿日期:2004-10-29 修回日期:2005-02-04 出版日期:2005-05-27 发布日期:2005-05-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (grant No 60376011) and Specialized Research Fund for the Doctoral Program of High Education (grant No 20040700001)

SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

Lü Zheng (吕政), Chen Zhi-Ming (陈治明), Pu Hong-Bin (蒲红斌)   

  1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048
  • Received:2004-10-29 Revised:2005-02-04 Online:2005-05-27 Published:2005-05-27
  • Supported by:
    Project supported by the National Natural Science Foundation of China (grant No 60376011) and Specialized Research Fund for the Doctoral Program of High Education (grant No 20040700001)

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摘要： Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiodes, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of 1′1015cm－3, a thickness of 1.6μm and x=0.3, has a peak value of 250mA/W at 0.52μm and the peak value can even reach 102 mA/W at 0.7μm.

关键词: SiCGe/SiC, heterojunction, absorption coefficient.

Abstract: Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiodes, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of $1\times10^{15}$cm－3, a thickness of 1.6μm and x=0.3, has a peak value of 250mA/W at 0.52μm and the peak value can even reach 102 mA/W at 0.7μm.

Key words: SiCGe/SiC, heterojunction, absorption coefficient.

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
85.60.Bt (Optoelectronic device characterization, design, and modeling)