[1] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
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Yu-De Niu(牛毓德), Yu-Zhen Wang(汪玉珍), Kai-Ming Zhu(朱凯明), Wang-Gui Ye(叶王贵), Zhe Feng(冯喆), Hui Liu(柳挥), Xin Yi(易鑫), Yi-Huan Wang(王怡欢), and Xuan-Yi Yuan(袁轩一). Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors[J]. 中国物理B, 2023, 32(2): 28703-028703. |
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Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2[J]. 中国物理B, 2023, 32(1): 17901-017901. |
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Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502. |
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Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing[J]. 中国物理B, 2022, 31(9): 98503-098503. |
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Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Enhanced photoluminescence of monolayer MoS2 on stepped gold structure[J]. 中国物理B, 2022, 31(8): 87803-087803. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo2O4/xPbS nanocomposites for optoelectronic applications[J]. 中国物理B, 2022, 31(6): 67801-067801. |
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Jian-Min Wu(吴建民), Li-Hui Li(黎立辉), Wei-Hao Zheng(郑玮豪), Bi-Yuan Zheng(郑弼元), Zhe-Yuan Xu(徐哲元), Xue-Hong Zhang(张学红), Chen-Guang Zhu(朱晨光), Kun Wu(吴琨), Chi Zhang(张弛), Ying Jiang(蒋英),Xiao-Li Zhu(朱小莉), and Xiu-Juan Zhuang(庄秀娟). Exciton luminescence and many-body effect of monolayer WS2 at room temperature[J]. 中国物理B, 2022, 31(5): 57803-057803. |
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Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method[J]. 中国物理B, 2022, 31(5): 57801-057801. |
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Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. 中国物理B, 2022, 31(5): 56108-056108. |
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Wei-Yuan Luo(罗韦媛), Wen-Feng Sun(孙文丰), Bo Li(黎波), Xia Xiang(向霞), Xiao-Long Jiang(蒋晓龙),Wei Liao(廖威), Hai-Jun Wang(王海军), Xiao-Dong Yuan(袁晓东),Xiao-Dong Jiang(蒋晓东), and Xiao-Tao Zu(祖小涛). Surface defects, stress evolution, and laser damage enhancement mechanism of fused silica under oxygen-enriched condition[J]. 中国物理B, 2022, 31(5): 54214-054214. |
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Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生). Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions[J]. 中国物理B, 2022, 31(4): 46103-046103. |
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Xiao-Ke Lei(雷晓轲), Bin-Cheng Li(李斌成), Qi-Ming Sun(孙启明), Jing Wang(王静), Chun-Ming Gao(高椿明), and Ya-Fei Wang(王亚非). Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon[J]. 中国物理B, 2022, 31(3): 38102-038102. |
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Jia-Li You(游佳丽), Yu-Song Wang(王雨松), Tong Wang(王彤), Li-Li Fu(付丽丽), Qing-Yang Yue(岳庆炀), Xiang-Fu Wang(王祥夫), Rui-Lin Zheng(郑锐林), and Chun-Xiao Liu(刘春晓). Optical properties of He+-implanted and diamond blade-diced terbium gallium garnet crystal planar and ridge waveguides[J]. 中国物理B, 2022, 31(11): 114203-114203. |