中国物理B ›› 2004, Vol. 13 ›› Issue (8): 1365-1369.doi: 10.1088/1009-1963/13/8/033

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Structural evolution of a-Si:H/SiO2 multilayers upon step by step thermal annealing

梅嘉欣1, 马忠元1, 朱达1, 隋妍萍1, 李伟1, 李鑫1, 芮云军1, 黄信凡1, 陈坤基1, 徐骏2   

  1. (1)National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; (2)National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 收稿日期:2003-10-17 修回日期:2004-02-12 出版日期:2004-06-21 发布日期:2005-06-30
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10374049, 10174035, 90301009), the State Key Programme for Basic Research of China (Grant No 2001CB610503) and the Natural Science Foundation of Jiangsu Province (Grant No BK

Structural evolution of a-Si:H/SiO2 multilayers upon step by step thermal annealing

Mei Jia-Xin (梅嘉欣)a, Xu Jun (徐骏)ab, Ma Zhong-Yuan (马忠元)a, Zhu-Da (朱达)a, Sui Yan-Ping (隋妍萍)a, Li Wei (李伟)a, Li Xin (李鑫)a, Rui Yun-Jun (芮云军)a, Huang Xin-Fan (黄信凡)a, Chen Kun-Ji (陈坤基)a   

  1. a National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2003-10-17 Revised:2004-02-12 Online:2004-06-21 Published:2005-06-30
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10374049, 10174035, 90301009), the State Key Programme for Basic Research of China (Grant No 2001CB610503) and the Natural Science Foundation of Jiangsu Province (Grant No BK

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摘要： a-Si:H/SiO_2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350℃ to 1100℃ in N_2 ambient with an increment of 100℃. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si－O stretching vibration of SiO_2 layers shift to 1087cm^{-1} after annealing at 1100℃, which demonstrates that the SiO_2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si－O vibration from interfacial SiO_x was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiO_x networks. The H-related bonds were observed in the form of H－Si－O_3 and H－Si－Si_{3-n}O_n (n=1－2) configurations, which are supposed to be present in SiO_2 and interfacial SiO_x layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies.

关键词: a-Si:H/SiO_2 multilayers, annealing, bonding configurations

Abstract: a-Si:H/SiO_2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350℃ to 1100℃ in N$_2$ ambient with an increment of 100℃. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si－O stretching vibration of SiO$_2$ layers shift to 1087cm$^{-1}$ after annealing at 1100℃, which demonstrates that the SiO$_2$ films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si－O vibration from interfacial SiO$_x$ was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiO$_x $networks. The H-related bonds were observed in the form of H－Si－O$_3$ and H－Si－Si$_{3-n}$O$_n$ (n=1－2) configurations, which are supposed to be present in SiO$_2$ and interfacial SiO$_x$ layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies.

Key words: a-Si:H/SiO$_2$ multilayers, annealing, bonding configurations

中图分类号:  (Multilayers)

  • 68.65.Ac
81.40.Gh (Other heat and thermomechanical treatments) 61.72.Cc (Kinetics of defect formation and annealing) 78.30.Er (Solid metals and alloys ?) 52.77.Dq (Plasma-based ion implantation and deposition) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.30.-j (Infrared and Raman spectra) 82.30.-b (Specific chemical reactions; reaction mechanisms)