Raman properties of GaSb nanoparticles embedded in SiO2 films

doi:10.1088/1009-1963/13/12/034

中国物理B ›› 2004, Vol. 13 ›› Issue (12): 2169-2173.doi: 10.1088/1009-1963/13/12/034

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Raman properties of GaSb nanoparticles embedded in SiO₂ films

刘发民¹, 王天民¹, 张立德²

(1)Department of Applied Physics, Centre of Materials Physics and Chemistry, School of Science, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; (2)Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

收稿日期:2004-03-04 修回日期:2004-06-23 出版日期:2004-12-20 发布日期:2004-12-20
基金资助:
Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

Raman properties of GaSb nanoparticles embedded in SiO₂ films

Liu Fa-Min (刘发民)^a, Wang Tian-Min (王天民)^a, Zhang Li-De (张立德)^b

^a Department of Applied Physics, Centre of Materials Physics and Chemistry, School of Science, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; ^b Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Received:2004-03-04 Revised:2004-06-23 Online:2004-12-20 Published:2004-12-20
Supported by:
Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

摘要/Abstract

摘要： The Raman shifts of nanocrystalline GaSb excited by an Ar^{+} ion laser at wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.

Abstract: The Raman shifts of nanocrystalline GaSb excited by an Ar^{+} ion laser at wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.

Key words: GaSb nanocrystals, novel Raman properties, phonon confinement and tensile stress effects

中图分类号: (III-V and II-VI semiconductors)

78.30.Fs

78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 78.66.Fd (III-V semiconductors)

刘发民, 王天民, 张立德. Raman properties of GaSb nanoparticles embedded in SiO₂ films[J]. 中国物理B, 2004, 13(12): 2169-2173.

Liu Fa-Min (刘发民), Wang Tian-Min (王天民), Zhang Li-De (张立德). Raman properties of GaSb nanoparticles embedded in SiO₂ films[J]. Chinese Physics, 2004, 13(12): 2169-2173.

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Raman properties of GaSb nanoparticles embedded in SiO₂ films

Raman properties of GaSb nanoparticles embedded in SiO₂ films

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