中国物理B ›› 2003, Vol. 12 ›› Issue (11): 1296-1300.doi: 10.1088/1009-1963/12/11/319

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Electron self-energy and effective mass in a single heterostructure

花修坤1, 李振亚2, 吴银忠3   

  1. (1)Department of Physics, Suzhou University, Suzhou 215006, China; (2)Department of Physics, Suzhou University, Suzhou 215006, China; Center of Chinese Advanced Science and Technology (World Laboratory), PO Box 8730, Beijing 100080, China; (3)Department of Physics, Suzhou University, Suzhou 215006, China; Department of Physics, Changshu College, Changshu 215006, China
  • 收稿日期:2003-02-10 修回日期:2003-04-07 出版日期:2003-11-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10174049).

Electron self-energy and effective mass in a single heterostructure

Hua Xiu-Kun (花修坤)a, Wu Yin-Zhong (吴银忠)ab, Li Zhen-Ya (李振亚)ac    

  1. a Department of Physics, Suzhou University, Suzhou 215006, China; b Department of Physics, Changshu College, Changshu 215006, China; c Center of Chinese Advanced Science and Technology (World Laboratory), PO Box 8730, Beijing 100080, China
  • Received:2003-02-10 Revised:2003-04-07 Online:2003-11-16 Published:2005-03-16
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10174049).

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摘要： In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Green-function method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.

Abstract: In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Green-function method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.

Key words: semiconductors, electron-phonon interactions

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
71.38.-k (Polarons and electron-phonon interactions) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)