Molecular dynamics simulation for the sputtering of an Al2O3 sample bombarded with MeV Si ions

doi:10.1088/1009-1963/11/12/309

中国物理B ›› 2002, Vol. 11 ›› Issue (12): 1267-1271.doi: 10.1088/1009-1963/11/12/309

Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions

今西信嗣¹, 薛建明²

(1)Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501, Japan; (2)Institute of heavy ion physics, Peking University, Beijing 100871, China

收稿日期:2002-05-22 修回日期:2002-07-04 出版日期:2002-12-12 发布日期:2005-06-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No 19805001).

Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions

Xue Jian-Ming (薛建明)^a， Nobutsugu Imanishi (今西信嗣)^b

^a Institute of heavy ion physics, Peking University, Beijing 100871, China; ^b Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501, Japan

Received:2002-05-22 Revised:2002-07-04 Online:2002-12-12 Published:2005-06-12
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No 19805001).

摘要/Abstract

摘要： Sputtering yield and kinetic energy distribution (KED) of Al particles from an Al₂O₃ sample bombarded with 1－5 MeV Si ions have been simulated using the molecular dynamics method. These have also been measured experimentally with a conventional time-of-flight facility. In the simulation, a new interatomic potential specific to the Al₂O₃ target was developed, and both the nuclear energy loss S_n and electronic energy loss S_e were taken into consideration. By carefully adjusting the simulation parameters, the simulated sputtering yields fit well with the experimental results, and the simulated KED of Al particles also fits roughly with the experimental KED after being modified theoretically.

Abstract: Sputtering yield and kinetic energy distribution (KED) of Al particles from an Al₂O₃ sample bombarded with 1－5 MeV Si ions have been simulated using the molecular dynamics method. These have also been measured experimentally with a conventional time-of-flight facility. In the simulation, a new interatomic potential specific to the Al₂O₃ target was developed, and both the nuclear energy loss S_n and electronic energy loss S_e were taken into consideration. By carefully adjusting the simulation parameters, the simulated sputtering yields fit well with the experimental results, and the simulated KED of Al particles also fits roughly with the experimental KED after being modified theoretically.

Key words: sputtering, MD simulation, kinetic energy distribution, sputtering yield

中图分类号: (Atomic, molecular, and ion beam impact and interactions with surfaces)

79.20.Rf

薛建明, 今西信嗣. Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions[J]. 中国物理B, 2002, 11(12): 1267-1271.

Xue Jian-Ming (薛建明), Nobutsugu Imanishi (今西信嗣). Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions[J]. Chinese Physics, 2002, 11(12): 1267-1271.

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Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions

Molecular dynamics simulation for the sputtering of an Al₂O₃ sample bombarded with MeV Si ions

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