中国物理B ›› 2007, Vol. 16 ›› Issue (8): 2455-2461.doi: 10.1088/1009-1963/16/8/050

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

王超, 张义门, 张玉明, 马格林, 郭辉, 徐大庆   

  1. Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 收稿日期:2006-12-20 修回日期:2007-01-16 出版日期:2007-08-20 发布日期:2007-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~60376001), the National Basic Research Program of China (Grant No~2002CB311904) and the National Defense Basic Research Program of China (Grant No~51327020202).

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

Wang Chao(王超)† , Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Ma Ge-Lin(马格林), Guo Hui(郭辉), and Xu Da-Qing(徐大庆)   

  1. Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2006-12-20 Revised:2007-01-16 Online:2007-08-20 Published:2007-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~60376001), the National Basic Research Program of China (Grant No~2002CB311904) and the National Defense Basic Research Program of China (Grant No~51327020202).

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摘要： The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.

Abstract: The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.

Key words: vanadium implanted SiC, annealing, diffusion, surface morphology

中图分类号:  (Diffusion of impurities ?)

  • 66.30.J-
61.72.Cc (Kinetics of defect formation and annealing) 61.72.up (Other materials) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces)