中国物理B ›› 2008, Vol. 17 ›› Issue (10): 3836-3840.doi: 10.1088/1674-1056/17/10/049

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Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

郝小鹏1, 王丹妮1, 李炳生2, 张崇宏2, 周丽宏2, 张洪华2, 杨义涛2, 张丽卿2   

  1. (1)Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China; (2)Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • 收稿日期:2008-01-30 修回日期:2008-03-04 出版日期:2008-10-20 发布日期:2008-10-20

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

Li Bing-Sheng(李炳生)a)†, Zhang Chong-Hong(张崇宏)a), Hao Xiao-Peng(郝小鹏)b), Wang Dan-Ni(王丹妮)b), Zhou Li-Hong(周丽宏)a), Zhang Hong-Hua(张洪华)a), Yang Yi-Tao(杨义涛)a), and Zhang Li-Qing(张丽卿)a)   

  1. a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; b Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China
  • Received:2008-01-30 Revised:2008-03-04 Online:2008-10-20 Published:2008-10-20

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摘要： In the present work, a Cz--Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15\,keV He implantation at a fluence of $2\ti 10^{16}$\,cm$^{ - 2}$ and followed by thermal annealing at 673\,K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473\,K for 2\,h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

关键词: positron annihilation, nanocavity, oxygen diffusion, silicon dioxide

Abstract: In the present work, a Cz--Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of $2\times 10^{16}$ cm$^{ - 2}$ and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Key words: positron annihilation, nanocavity, oxygen diffusion, silicon dioxide

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.82.Fk (Semiconductors) 79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 81.65.Mq (Oxidation) 78.70.Bj (Positron annihilation)