中国物理B ›› 2005, Vol. 14 ›› Issue (8): 1626-1630.doi: 10.1088/1009-1963/14/8/029

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Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature

凌立1, 顾昌鑫1, 漆乐俊2, 李维卿2, 陆明2, 杨新菊3   

  1. (1)Department of Materials Science, Fudan University, Shanghai 200433, China; (2)Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University,Shanghai 200433, China; (3)Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • 收稿日期:2004-12-19 修回日期:2005-03-28 出版日期:2005-07-13 发布日期:2005-07-13
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10374016), and the Science and Technology Commission of Shanghai (Grant No 03DJ14001).

Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature

Qi Le-Jun (漆乐俊)a, Ling Li (凌立)b, Li Wei-Qing (李维卿)a, Yang Xin-Ju (杨新菊)c,  Gu Chang-Xin (顾昌鑫)b, Lu Ming (陆明)a   

  1. a Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, China; b Department of Materials Science, Fudan University, Shanghai 200433, China; c Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • Received:2004-12-19 Revised:2005-03-28 Online:2005-07-13 Published:2005-07-13
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10374016), and the Science and Technology Commission of Shanghai (Grant No 03DJ14001).

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摘要： Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley--Harper model fails to explain these data. By taking into account the Ehrlich--Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.

关键词: sputtering, surface diffusion, silicon, nanostructuring, models of nonlinear phenomena

Abstract: Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley--Harper model fails to explain these data. By taking into account the Ehrlich--Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.

Key words: sputtering, surface diffusion, silicon, nanostructuring, models of nonlinear phenomena

中图分类号:  (Structure of clean surfaces (and surface reconstruction))

  • 68.35.B-
68.47.Fg (Semiconductor surfaces) 68.49.Sf (Ion scattering from surfaces (charge transfer, sputtering, SIMS)) 79.20.Rf (Atomic, molecular, and ion beam impact and interactions with surfaces)