中国物理B ›› 2002, Vol. 11 ›› Issue (1): 83-86.doi: 10.1088/1009-1963/11/1/317

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

贺德衍1, K. A. McGreer2   

  1. (1)Department of Physics, Lanzhou University, Lanzhou 730000, China; (2)Department of Physics, University of Manitoba, Winnipeg, MB, R3T 2N2, Canada
  • 收稿日期:2000-12-16 修回日期:2001-06-29 出版日期:2005-06-12 发布日期:2005-06-12

Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

He De-Yan (贺德衍)a, K. A. McGreerb   

  1. a Department of Physics, Lanzhou University, Lanzhou 730000, China; b Department of Physics, University of Manitoba, Winnipeg, MB, R3T 2N2, Canada
  • Received:2000-12-16 Revised:2001-06-29 Online:2005-06-12 Published:2005-06-12

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摘要： The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO2 upper cladding and a 5.0μm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.

Abstract: The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region. The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO2 upper cladding and a 5.0μm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependent insertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at 1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.

Key words: SiON optical waveguide, insertion loss, annealing, interface roughness

中图分类号:  (Waveguides, couplers, and arrays)

  • 42.82.Et
42.79.Gn (Optical waveguides and couplers) 68.35.Ct (Interface structure and roughness) 42.81.Bm (Fabrication, cladding, and splicing) 42.81.Dp (Propagation, scattering, and losses; solitons) 68.37.Ps (Atomic force microscopy (AFM))