中国物理B ›› 2001, Vol. 10 ›› Issue (8): 748-750.doi: 10.1088/1009-1963/10/8/316

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TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

石建军, 黄少云, 陈坤基, 黄信凡, 徐骏   

  1. State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2000-10-28 修回日期:2001-03-28 出版日期:2001-08-15 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 69890225 and 69876019) and by the Natural Science Foundation of Jiangsu province, China (Grant No.BK97021)

TRANSPORT PROPERTIES OF $\mu$c-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

Shi Jian-jun (石建军), Huang Shao-yun (黄少云), Chen Kun-ji (陈坤基), Huang Xin-fan (黄信凡), Xu Jun (徐骏)   

  1. State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2000-10-28 Revised:2001-03-28 Online:2001-08-15 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 69890225 and 69876019) and by the Natural Science Foundation of Jiangsu province, China (Grant No.BK97021)

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摘要： Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method. With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.

Abstract: Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method. With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.

Key words: Microcrystalline silicon, conductivity, mobility, travelling wave method

中图分类号:  (Photoconduction and photovoltaic effects)

  • 73.50.Pz
78.30.Hv (Other nonmetallic inorganics) 78.66.-w (Optical properties of specific thin films) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.55.-a (Thin film structure and morphology)