中国物理B ›› 2011, Vol. 20 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/20/11/117701

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Local leakage current behaviours of BiFeO3 films

陈斌1, 朱小健1, 左正笏1, 刘宜伟1, 詹清峰1, 李润伟1, 邹成2, 陈远富3   

  1. (1)Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institu; (2)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineerin; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-06-07 修回日期:2011-06-19 出版日期:2011-11-15 发布日期:2011-11-15
  • 基金资助:
    Project supported by the Chinese Academy of Sciences, the State Key Project of Fundamental Research of China, and the Natural Science Foundation of Ningbo, China.

Local leakage current behaviours of BiFeO3 films

Zou Cheng(邹成)a)b)c), Chen Bin(陈斌) b)c)†, Zhu Xiao-Jian(朱小健)b)c), Zuo Zheng-Hu(左正笏)b)c), Liu Yi-Wei(刘宜伟) b)c), Chen Yuan-Fu(陈远富)a), Zhan Qing-Feng(詹清峰)b)c), and Li Run-Wei(李润伟)b)c)   

  1. a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; b Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; c Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China 
  • Received:2011-06-07 Revised:2011-06-19 Online:2011-11-15 Published:2011-11-15
  • Supported by:
    Project supported by the Chinese Academy of Sciences, the State Key Project of Fundamental Research of China, and the Natural Science Foundation of Ningbo, China.

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摘要： The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO3 films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.

关键词: polycrystalline BiFeO3 thin films, local leakage current, conductive atomic force microscopy

Abstract: The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO3 films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.

Key words: polycrystalline BiFeO3 thin films, local leakage current, conductive atomic force microscopy

中图分类号:  (Multiferroic/magnetoelectric films)

  • 77.55.Nv
73.50.Pz (Photoconduction and photovoltaic effects) 73.50.-h (Electronic transport phenomena in thin films)