中国物理B ›› 1998, Vol. 7 ›› Issue (11): 823-831.doi: 10.1088/1004-423X/7/11/004

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BEHAVIOR OF PLASMA FORMED IN A PAGODA-SHAPED RADIO FREQUENCY PLASMA SOURCE

姚鑫兹1, 江德仪1, 刘训春2, 叶甜春2   

  1. (1)Institute of Physics, Academia Sinica, Beijing 100080, China; (2)Microelectronics R & D Center, Academia Sinica, Beijing 100010, China
  • 收稿日期:1998-03-09 修回日期:1998-05-20 出版日期:1998-11-20 发布日期:1998-11-20

BEHAVIOR OF PLASMA FORMED IN A PAGODA-SHAPED RADIO FREQUENCY PLASMA SOURCE

Yao Xin-zi (姚鑫兹)a, Jiang De-yi (江德仪)a, Liu Xun-chun (刘训春)b, Ye Tian-chun (叶甜春)b   

  1. a Institute of Physics, Academia Sinica, Beijing 100080, China; b Microelectronics R & D Center, Academia Sinica, Beijing 100010, China
  • Received:1998-03-09 Revised:1998-05-20 Online:1998-11-20 Published:1998-11-20

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摘要： A large volume, high density, and pagoda-shaped radio frequency (rf) plasma source has been developed for use in large scale plasma processing. The inductively coupled plasma (ICP) is created by a pagoda-shaped 13.65 MHz antenna to improve the plasma uniformity on substrate. Plasma densities and electron temperatures are measured by using a Langmuir probe and their radial and axial profiles are attained. Electron density of >1×1011 cm-3 on the substrate and uniform to ≦±1.6% over 16 cm diameter can be produced at argon pressure of 6.65×10-1 Pa and input rf power of 1 kW. ICP etching photoresist in O2 plasma has been tested and the etching uniformity consists with that of the plasma density on the substrate. A large scale etched sample with the uniformity to ≦±1.1% over 10 cm diameter or to ≦±2.2% over 13 cm diameter has been obtained.

Abstract: A large volume, high density, and pagoda-shaped radio frequency (rf) plasma source has been developed for use in large scale plasma processing. The inductively coupled plasma (ICP) is created by a pagoda-shaped 13.65 MHz antenna to improve the plasma uniformity on substrate. Plasma densities and electron temperatures are measured by using a Langmuir probe and their radial and axial profiles are attained. Electron density of >1×1011 cm-3 on the substrate and uniform to $\leqslant$±1.6% over 16 cm diameter can be produced at argon pressure of 6.65×10-1 Pa and input rf power of 1 kW. ICP etching photoresist in O2 plasma has been tested and the etching uniformity consists with that of the plasma density on the substrate. A large scale etched sample with the uniformity to $\leqslant$±1.1% over 10 cm diameter or to $\leqslant$±2.2% over 13 cm diameter has been obtained.

中图分类号:  (Plasma sources)

  • 52.50.Dg
52.50.Qt (Plasma heating by radio-frequency fields; ICR, ICP, helicons) 52.70.Ds (Electric and magnetic measurements) 52.77.Bn (Etching and cleaning)