中国物理B ›› 1997, Vol. 6 ›› Issue (8): 624-628.doi: 10.1088/1004-423X/6/8/009

• • 上一篇    

STIMULATED EMISSION AND GAIN MEASUREMENTS IN InAsP/InP STRAINED-MULTIPLE-QUANTUM WELLS

赵一广, 黄显玲   

  1. Department of Physics, Peking University, Beijing 100871, China; State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China
  • 收稿日期:1996-07-04 修回日期:1996-11-15 出版日期:1997-08-20 发布日期:1997-08-20

STIMULATED EMISSION AND GAIN MEASUREMENTS IN InAsP/InP STRAINED-MULTIPLE-QUANTUM WELLS

ZHAO YI-GUANG (赵一广), HUANG XIAN-LING (黄显玲)   

  1. Department of Physics, Peking University, Beijing 100871, China; State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China
  • Received:1996-07-04 Revised:1996-11-15 Online:1997-08-20 Published:1997-08-20

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摘要： We have studied the stimulated emission from InAsP/InP strained-multiple-quantum wells at room temperature. The stimulated emission spectra weave seen with three lobes, which are E1H and E1L transitions, and a tran-sitions from heavy hole initial states to localized interface states. The E1H transitions exhibited different gain value from that of the transitions between the heavy hole and the interface states. With increasing excitation intensity, the gain of the interface peak appears to be saturated at lower excitation intensity. A method for identifying the inter face peak in the photoluminescene spectrum has been proposed.

Abstract: We have studied the stimulated emission from InAsP/InP strained-multiple-quantum wells at room temperature. The stimulated emission spectra weave seen with three lobes, which are E1H and E1L transitions, and a tran-sitions from heavy hole initial states to localized interface states. The E1H transitions exhibited different gain value from that of the transitions between the heavy hole and the interface states. With increasing excitation intensity, the gain of the interface peak appears to be saturated at lower excitation intensity. A method for identifying the inter face peak in the photoluminescene spectrum has been proposed.

中图分类号:  (Stimulated emission)

  • 78.45.+h
78.67.De (Quantum wells) 73.20.At (Surface states, band structure, electron density of states) 78.55.Cr (III-V semiconductors) 73.21.Fg (Quantum wells)