中国物理B ›› 1997, Vol. 6 ›› Issue (1): 52-56.doi: 10.1088/1004-423X/6/1/009
宫崎诚一1, 广濑全孝1, 徐骏2, 陈坤基2, 冯端2
XU JUN (徐骏)a, CHEN KUN-JI (陈坤基)a, FENG DUAN (冯端)a, MIYAZAKI SEIICHI (宫崎诚一)b, HIROSE MASATAKA (广濑全孝)b
摘要: A series of hydrogenated amorphous silicon-germanium alloys have been fabricated by high hydrogen dilution method. The Ge content in the film increasea from 0.4 to 0.8 and the corresponding optical bandgap is in the range of 1.48-1.22eV. The photoconductivity is 3.6×10-6 S/cm and photosensitivity is as high as 7.3×103 at an optical bandgap of 1.48eV. The deterioration of photoelectric properties with increasing Ge content could be attributed to the decrease of the bonded hydrogen content and the inhomogeneous structure in the alloy network.
中图分类号: (Amorphous semiconductors; glasses)