中国物理B ›› 1997, Vol. 6 ›› Issue (1): 52-56.doi: 10.1088/1004-423X/6/1/009

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STRUCTURE AND PHOTOELECTRIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMAN-IUM ALLOYS PRODUCED BY HIGH HYDROGEN DILUTION METHOD

宫崎诚一1, 广濑全孝1, 徐骏2, 陈坤基2, 冯端2   

  1. (1)Department of Electronical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan; (2)Department of Physics and State Key Laboratory of Solid State Microstructurs, Nanjing University, Nanjing 210008, China
  • 收稿日期:1996-01-03 出版日期:1997-01-20 发布日期:1997-01-20

STRUCTURE AND PHOTOELECTRIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMAN-IUM ALLOYS PRODUCED BY HIGH HYDROGEN DILUTION METHOD

XU JUN (徐骏)a, CHEN KUN-JI (陈坤基)a, FENG DUAN (冯端)a, MIYAZAKI SEIICHI (宫崎诚一)b, HIROSE MASATAKA (广濑全孝)b   

  1. a Department of Physics and State Key Laboratory of Solid State Microstructurs, Nanjing University, Nanjing 210008, China; b Department of Electronical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
  • Received:1996-01-03 Online:1997-01-20 Published:1997-01-20

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摘要： A series of hydrogenated amorphous silicon-germanium alloys have been fabricated by high hydrogen dilution method. The Ge content in the film increasea from 0.4 to 0.8 and the corresponding optical bandgap is in the range of 1.48-1.22eV. The photoconductivity is 3.6×10-6 S/cm and photosensitivity is as high as 7.3×103 at an optical bandgap of 1.48eV. The deterioration of photoelectric properties with increasing Ge content could be attributed to the decrease of the bonded hydrogen content and the inhomogeneous structure in the alloy network.

Abstract: A series of hydrogenated amorphous silicon-germanium alloys have been fabricated by high hydrogen dilution method. The Ge content in the film increasea from 0.4 to 0.8 and the corresponding optical bandgap is in the range of 1.48-1.22eV. The photoconductivity is 3.6×10-6 S/cm and photosensitivity is as high as 7.3×103 at an optical bandgap of 1.48eV. The deterioration of photoelectric properties with increasing Ge content could be attributed to the decrease of the bonded hydrogen content and the inhomogeneous structure in the alloy network.

中图分类号:  (Amorphous semiconductors; glasses)

  • 73.61.Jc
68.55.-a (Thin film structure and morphology) 72.40.+w (Photoconduction and photovoltaic effects) 68.55.A- (Nucleation and growth) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.Jg (Amorphous semiconductors; glasses)