中国物理B ›› 2007, Vol. 16 ›› Issue (8): 2475-2478.doi: 10.1088/1009-1963/16/8/053

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Si1Sb2Te3 phase change material for chalcogenide random access memory

宋志棠1, 刘波1, 刘卫丽1, 封松林1, 张挺2, 陈邦明3   

  1. (1)Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (2)Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China；Graduate School of the Chinese Academic of Sciences, Beijing 100049, China; (3)Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A.
  • 收稿日期:2006-05-12 修回日期:2007-01-08 出版日期:2007-08-20 发布日期:2007-08-20
  • 基金资助:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No~2006CB302700), the National High Technology Development Program of China (Grant No~2006AA03Z360), the Chinese Academy of Sciences (Grant No~Y2005027), Scien

Si1Sb2Te3 phase change material for chalcogenide random access memory

Zhang Ting(张挺)a)b)†, Song Zhi-Tang(宋志棠)a), Liu Bo(刘波)a), Liu Wei-Li(刘卫丽)a), Feng Song-Lin(封松林)a), and Chen Bomy(陈邦明)c)   

  1. a Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate School of the Chinese Academic of Sciences, Beijing 100049, China; c Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A.
  • Received:2006-05-12 Revised:2007-01-08 Online:2007-08-20 Published:2007-08-20
  • Supported by:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No~2006CB302700), the National High Technology Development Program of China (Grant No~2006AA03Z360), the Chinese Academy of Sciences (Grant No~Y2005027), Scien

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摘要： This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current--voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155~mA, which is smaller than the value 0.31~mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at $\sim$ 180℃ and changes to hexagonal structure at $\sim$ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3film was studied by four-point probe method. Data retention of the films was characterized as well.

关键词: phase change, chalcogenide random access memory, Si--Sb--Te

Abstract: This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current--voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at $\sim$ 180℃ and changes to hexagonal structure at $\sim$ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3film was studied by four-point probe method. Data retention of the films was characterized as well.

Key words: phase change, chalcogenide random access memory, Si--Sb--Te

中图分类号: 

  • 64.70.K-
64.60.Cn (Order-disorder transformations) 73.61.Jc (Amorphous semiconductors; glasses) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)