中国物理B ›› 2005, Vol. 14 ›› Issue (11): 2348-2351.doi: 10.1088/1009-1963/14/11/035

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Study on stability of hydrogenated amorphous silicon films

陈光华1, 张文理1, 马占洁1, 胡跃辉1, 何斌1, 荣延栋1, 朱秀红2, 丁毅3   

  1. (1)Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China; (2)Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China ; (3)Department of Physics, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2005-01-24 修回日期:2005-06-20 出版日期:2005-11-20 发布日期:2005-11-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No G2000028201-1).

Study on stability of hydrogenated amorphous silicon films

Zhu Xiu-Hong (朱秀红)a, Chen Guang-Hua (陈光华)a, Zhang Wen-Li (张文理)a, Ding Yi (丁毅)b, Ma Zhan-Jie (马占洁)a, Hu Yue-Hui (胡跃辉)a, He Bin (何斌)a, Rong Yan-Dong (荣延栋)a   

  1. a Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China; b Department of Physics, Lanzhou University, Lanzhou 730000, China
  • Received:2005-01-24 Revised:2005-06-20 Online:2005-11-20 Published:2005-11-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No G2000028201-1).

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摘要： Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (\sim 10^{5}) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (C_H}) as well as H--Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature,hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.

关键词: hydrogenated amorphous silicon (a-Si:H) films, photosensitivity, stability, microstructure, hydrogen elimination (HE) model

Abstract: Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (~$10^{5}$) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H--Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature,hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.

Key words: hydrogenated amorphous silicon (a-Si:H) films, photosensitivity, stability, microstructure, hydrogen elimination (HE) model

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
68.55.-a (Thin film structure and morphology) 73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Jc (Amorphous semiconductors; glasses) 78.30.Ly (Disordered solids) 78.66.Jg (Amorphous semiconductors; glasses)