中国物理B ›› 1996, Vol. 5 ›› Issue (5): 384-390.doi: 10.1088/1004-423X/5/5/009

• • 上一篇    

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr, Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

郑立荣, 张顺开, 林成鲁   

  1. State Key Laborantory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • 收稿日期:1995-02-07 出版日期:1996-05-20 发布日期:1996-05-20
  • 基金资助:
    Project supported by the Shanghai Natural Science Foundation, China.

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr, Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

ZHENG LI-RONG (郑立荣), ZHANG SHUN-KAI (张顺开), LIN CHENG-LU (林成鲁)   

  1. State Key Laborantory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • Received:1995-02-07 Online:1996-05-20 Published:1996-05-20
  • Supported by:
    Project supported by the Shanghai Natural Science Foundation, China.

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摘要： Ferroelectric Pb(Zr, Ti)O3 thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with Pr=15μC/cm2, Ec= 50kV/cm, high resistivity and high dielectric constant.

Abstract: Ferroelectric Pb(Zr, Ti)O3 thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with Pr=15μC/cm2, Ec= 50kV/cm, high resistivity and high dielectric constant.

中图分类号:  (Pulsed laser ablation deposition)

  • 81.15.Fg
61.05.cp (X-ray diffraction) 73.61.Ng (Insulators) 77.22.Ch (Permittivity (dielectric function)) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)