中国物理B ›› 2016, Vol. 25 ›› Issue (7): 76802-076802.doi: 10.1088/1674-1056/25/7/076802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface

Sheng-Chun Shen(沈胜春), Yan-Peng Hong(洪彦鹏), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Xin-Xin Wang(王欣欣), Jia-Cai Nie(聂家财)   

  1. Department of Physics, Beijing Normal University, Beijing 100875, China
  • 收稿日期:2015-11-24 修回日期:2016-03-21 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Jia-Cai Nie E-mail:jcnie@bnu.edu.cn
  • 基金资助:
    Project supported by the Ministry of Science and Technology of China (Grant Nos. 2013CB921701, 2013CBA01603, and 2014CB920903), the National Natural Science Foundation of China (Grant Nos. 10974019, 51172029, 91121012, 11422430, 11374035, 11474022, and 11474024), the Program for New Century Excellent Talents in the University of the Ministry of Education of China (Grant No. NCET-13-0054), and the Beijing Higher Education Young Elite Teacher Project, China (Grant No. YETP0238).

In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface

Sheng-Chun Shen(沈胜春), Yan-Peng Hong(洪彦鹏), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Xin-Xin Wang(王欣欣), Jia-Cai Nie(聂家财)   

  1. Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:2015-11-24 Revised:2016-03-21 Online:2016-07-05 Published:2016-07-05
  • Contact: Jia-Cai Nie E-mail:jcnie@bnu.edu.cn
  • Supported by:
    Project supported by the Ministry of Science and Technology of China (Grant Nos. 2013CB921701, 2013CBA01603, and 2014CB920903), the National Natural Science Foundation of China (Grant Nos. 10974019, 51172029, 91121012, 11422430, 11374035, 11474022, and 11474024), the Program for New Century Excellent Talents in the University of the Ministry of Education of China (Grant No. NCET-13-0054), and the Beijing Higher Education Young Elite Teacher Project, China (Grant No. YETP0238).

摘要: A systematic study of the two-dimensional electron gas at LaAlO3/SrTiO3(110) interface reveals an anisotropy along two specific directions, [001] and [111]. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the [111] direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin-orbit coupling, and the spin relaxation mechanism along both directions belongs to D'yakonov-Perel' (DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the [111] direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.

关键词: oxide interfaces, two-dimensional electron gas, anisotropy

Abstract: A systematic study of the two-dimensional electron gas at LaAlO3/SrTiO3(110) interface reveals an anisotropy along two specific directions, [001] and [111]. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the [111] direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin-orbit coupling, and the spin relaxation mechanism along both directions belongs to D'yakonov-Perel' (DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the [111] direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.

Key words: oxide interfaces, two-dimensional electron gas, anisotropy

中图分类号:  (Oxide surfaces)

  • 68.47.Gh
73.20.-r (Electron states at surfaces and interfaces) 81.15.Fg (Pulsed laser ablation deposition)