中国物理B ›› 1995, Vol. 4 ›› Issue (11): 859-863.doi: 10.1088/1004-423X/4/11/010

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PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

陈维德, 谢侃, 段俐宏, 谢小龙, 崔玉德   

  1. Institute of Semiconductors, and State Key Laboratory far Surface Physics, Academia Sinica, Beijing 100083, China
  • 收稿日期:1995-01-06 出版日期:1995-11-20 发布日期:1995-11-20
  • 基金资助:
    project supported by the National Natural Science Foundation of China.

PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

CHEN WEI-DE (陈维德), XIE KAN (谢侃), DUAN LI-HONG (段俐宏), XIE XIAO-LONG (谢小龙), CUI YU-DE (崔玉德)   

  1. Institute of Semiconductors, and State Key Laboratory far Surface Physics, Academia Sinica, Beijing 100083, China
  • Received:1995-01-06 Online:1995-11-20 Published:1995-11-20
  • Supported by:
    project supported by the National Natural Science Foundation of China.

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摘要： InP(100) surface treated with (NH4)2Sx has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH4)2Sx passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.

Abstract: InP(100) surface treated with (NH4)2Sx has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH4)2Sx passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.

中图分类号:  (Passivation)

  • 81.65.Rv
68.47.Fg (Semiconductor surfaces) 78.55.Cr (III-V semiconductors) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 68.35.Dv (Composition, segregation; defects and impurities)