中国物理B ›› 1994, Vol. 3 ›› Issue (3): 216-229.doi: 10.1088/1004-423X/3/3/008

• • 上一篇    

ELECTROREFLECTANCE SPECTRA OF GexSi1-x/Si STRAINED LAYER MULTIPLE-QUANTUM WELLS

潘士宏1, 黄硕1, 汪忠和1, 陈卫1, 张存洲1, 盛篪2, 王迅2   

  1. (1)Department of Physics, Nankai University, Tianjin 300071, China; (2)Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • 收稿日期:1993-07-05 出版日期:1994-03-20 发布日期:1994-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

ELECTROREFLECTANCE SPECTRA OF GexSi1-x/Si STRAINED LAYER MULTIPLE-QUANTUM WELLS

PAN SHI-HONG (潘士宏)a, HUANG SHUO (黄硕)a, WANG ZHONG-HE (汪忠和)a, CHEN WEI (陈卫)a, ZHANG CUN-ZHOU (张存洲)a, SHENG CHI (盛篪)b, WANG XUN (王迅)b   

  1. a Department of Physics, Nankai University, Tianjin 300071, China; b Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • Received:1993-07-05 Online:1994-03-20 Published:1994-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： We have investigated the optical transitions above the fundamental gap of a set of GexSi1-x/Si strained layer multiple-quantum wells by electroreflectance (ER). The sam-ples were grown by molecular beam espitaxy (MBE). The thickness of the strained layer of GexSi1-x was 5nm with Ge concentration x in the range from 0.4 to 0.5, and the Si barrier layer greater than 16nm. Considering the energy shift caused by strain and quantum well confinement, we were able to clearly recognize the transitions from different quantum well structures associated with the critical points E0, E′0, and E1. The transitions of the critical points E0 and E′0, which are very weak in bulk mateials, are apparently enhanced in the quantum well structures.

Abstract: We have investigated the optical transitions above the fundamental gap of a set of GexSi1-x/Si strained layer multiple-quantum wells by electroreflectance (ER). The sam-ples were grown by molecular beam espitaxy (MBE). The thickness of the strained layer of GexSi1-x was 5nm with Ge concentration x in the range from 0.4 to 0.5, and the Si barrier layer greater than 16nm. Considering the energy shift caused by strain and quantum well confinement, we were able to clearly recognize the transitions from different quantum well structures associated with the critical points E0, E′0, and E1. The transitions of the critical points E0 and E′0, which are very weak in bulk mateials, are apparently enhanced in the quantum well structures.

中图分类号:  (Quantum wells)

  • 78.67.De
78.60.Fi (Electroluminescence) 68.65.Fg (Quantum wells)