中国物理B ›› 1994, Vol. 3 ›› Issue (12): 925-931.doi: 10.1088/1004-423X/3/12/007

• • 上一篇    

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

姜山, 沈学础   

  1. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1993-11-09 修回日期:1994-03-21 出版日期:1994-12-20 发布日期:1994-12-20

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

JIANG SHAN (姜山), SHEN XUE-CHU (沈学础)   

  1. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • Received:1993-11-09 Revised:1994-03-21 Online:1994-12-20 Published:1994-12-20

PDF (PC)

396

赞

摘要： The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd1-xMnxTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd1-xMnxTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.

Abstract: The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd1-xMnxTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd1-xMnxTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.

中图分类号:  (Quantum wells)

  • 78.67.De
71.20.Nr (Semiconductor compounds) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections) 75.50.Pp (Magnetic semiconductors) 78.20.Ls (Magneto-optical effects)