中国物理B ›› 1994, Vol. 3 ›› Issue (10): 746-757.doi: 10.1088/1004-423X/3/10/004

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BEHAVIOR OF Ar PLASMA FORMED IN A HIGH DENSITY PLASMA SOURCE-AN ECR REACTOR

D.B. GRAVES1, 吴汉明2, 李明2, R.K PORTEOUS3   

  1. (1)Department of Chemical Engineering, University of California, Berkeley CA94720, U.S.A.; (2)Institute of Mechanics, Academia Sinica, Beijing 100080, China; and China Center of Advanced Science and Technology (World Laboratory), P. O. Box 873O, Beijing 100080, China; (3)Plasma Research Laboratory. Australia National University, Canberra, Australia.
  • 收稿日期:1993-12-07 出版日期:1994-10-20 发布日期:1994-10-20
  • 基金资助:
    Project supported in part by the Presidential Foundation of the Chinese Academy of Sciences.

BEHAVIOR OF Ar PLASMA FORMED IN A HIGH DENSITY PLASMA SOURCE-AN ECR REACTOR

WU HAN-MING (吴汉明), D.B. GRAVESa, R.K PORTEOUSb, LI MING (李明)   

  1. Institute of Mechanics, Academia Sinica, Beijing 100080, China; and China Center of Advanced Science and Technology (World Laboratory), P. O. Box 873O, Beijing 100080, China; b Department of Chemical Engineering, University of California, Berkeley CA94720, U.S.A.; c Plasma Research Laboratory. Australia National University, Canberra, Australia.
  • Received:1993-12-07 Online:1994-10-20 Published:1994-10-20
  • Supported by:
    Project supported in part by the Presidential Foundation of the Chinese Academy of Sciences.

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摘要： In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.

Abstract: In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.

中图分类号:  (Plasma sources)

  • 52.50.Dg
76.40.+b (Diamagnetic and cyclotron resonances) 52.77.Bn (Etching and cleaning) 52.77.Dq (Plasma-based ion implantation and deposition) 52.65.-y (Plasma simulation) 52.25.Jm (Ionization of plasmas)