中国物理B ›› 1997, Vol. 6 ›› Issue (6): 466-470.doi: 10.1088/1004-423X/6/6/009

• • 上一篇    

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

陈逸郡1, 高婷2, 鲍希茂2, 阎锋2, 佟嵩2   

  1. (1)Analysis Center of Nanjing University,Nanjing 210093,China; (2)Department of Physics and State Key Laboratory of Solid Microstructures,Nanjing University,Nanjing 210093,China
  • 收稿日期:1996-08-06 出版日期:1997-06-20 发布日期:1997-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

GAO TING (高婷)a, BAO XI-MAO (鲍希茂)a, YAN FENG (阎锋)a, TONG SONG (佟嵩)a, CHEB YI-JUN (陈逸郡)b   

  1. a Department of Physics and State Key Laboratory of Solid Microstructures,Nanjing University,Nanjing 210093,China; b Analysis Center of Nanjing University,Nanjing 210093,China
  • Received:1996-08-06 Online:1997-06-20 Published:1997-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process.

Abstract: Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process.

中图分类号:  (Ge and Si)

  • 61.72.uf
68.47.Fg (Semiconductor surfaces) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.55.Hx (Other solid inorganic materials) 78.55.Ap (Elemental semiconductors) 61.72.Cc (Kinetics of defect formation and annealing)