Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

doi:10.1088/1674-1056/ab9738

中国物理B ›› 0, Vol. ›› Issue (): 88503-088503.doi: 10.1088/1674-1056/ab9738

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进)

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

收稿日期:2020-04-22 修回日期:2020-05-21 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜)¹, Yan Shao(邵龑)^1,2, Xiao-Lin Wang(王晓琳)¹, Xiaohan Wu(吴小晗)¹, Wen-Jun Liu(刘文军)¹, Shi-Jin Ding(丁士进)¹

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

Received:2020-04-22 Revised:2020-05-21 Online:2020-07-05 Published:2020-07-05
Contact: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

摘要/Abstract

摘要： Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX₃ (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 10³A·W^-1, an excellent detectivity in the order of 10¹⁶ Jones, and a light-to-dark current ratio up to 10⁵ under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

Abstract: Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX₃ (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 10³A·W^-1, an excellent detectivity in the order of 10¹⁶ Jones, and a light-to-dark current ratio up to 10⁵ under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

Key words: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

81.07.Ta (Quantum dots) 85.30.Tv (Field effect devices) 81.05.Gc (Amorphous semiconductors)

张美娜, 邵龑, 王晓琳, 吴小晗, 刘文军, 丁士进. Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels[J]. 中国物理B, 0, (): 88503-088503.

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进). Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels[J]. Chin. Phys. B, 0, (): 88503-088503.

参考文献

[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[2] Chuang C S, Fung T C, Mullins B G, Nomura K, Kamiya T, Shieh H P D, Hosono H and Kanicki J 2008 Proc. Soc. Inf. Display 39 1215
[3] Kamiya T, Nomura K and Hosono H 2010 Sci. Technol. Adv. Mater 11 044305
[4] Fortunato E, Barquinha P and Martins R 2012 Adv. Mater. 24 2945
[5] Heremans P, Tripathi A K, de Jamblinne de Meux A, Smits E C, Hou B, Pourtois G and Gelinck G H 2016 Adv. Mater. 28 4266
[6] Sheng J, Lee H J, Oh S and Park J S 2016 ACS Appl. Mater. Interfaces 8 33821
[7] Zhang Y H, Mei Z X, Liang H L and Du X L 2017 Chin. Phys. B 26 047307
[8] Xiao X, Zhang L, Shao Y, Zhou X, He H and Zhang S 2018 ACS Appl. Mater Interfaces 10 25850
[9] Zan H W, Chen W T, Hsueh H W, Kao S C, Ku M C, Tsai C C and Meng H F 2010 Appl. Phys. Lett. 97 203506
[10] Wang H, Xiao Y, Chen Z, Xu W, Long M and Xu J B 2015 Appl. Phys. Lett. 106 242102
[11] Liu J, Wen H and Shen L 2020 Nanotechnology 31 214001
[12] Xu Y and Lin Q 2020 Appl. Phys. Rev. 7 011315
[13] Wang Y F, Qu F D, Zhou J R, Guo W B, Dong W, Liu C X, Ruan S P 2015 Chin. Phys. Lett. 32 88504
[14] Yang J, Kwak H, Lee Y, Kang Y S, Cho M H, Cho J H, Kim Y H, Jeong S J, Park S, Lee H J and Kim H 2016 ACS Appl. Mater. Interfaces 8 8576
[15] Pak S W, Chu D, Song D Y, Lee S K and Kim E K 2017 Nanotechnology 28 475206
[16] Pei Z, Lai H C, Wang J Y, Chiang W H and Chen C H 2015 IEEE Electron Device Lett. 36 44
[17] Shin S W, Lee K H, Park J S and Kang S J 2015 ACS Appl. Mater. Interfaces 7 19666
[18] Hwang D K, Lee Y T, Lee H S, Lee Y J, Shokouh S H, Kyhm J h, Lee J, Kim H H, Yoo T H, Nam S H, Son D I, Ju B K, Park M C, Song J D, Choi W K and Im S 2016 NPG Asia Mater. 8 e233
[19] Weng Q C, An Z H, Xiong D Y and Zhu Z Q 2015 Chin. Phys. Lett. 32 108503
[20] Du S, Li G, Cao X, Wang Y, Lu H, Zhang S, Liu C and Zhou H 2017 Adv. Electron. Mater. 3 1600325
[21] Sun M, Fang Q, Zhang Z, Xie D, Sun Y, Xu J, Li W, Ren T and Zhang Y 2018 ACS Appl. Mater Interfaces 10 7231
[22] Tak Y J, Kim D J, Kim W G, Lee J H, Kim S J, Kim J H and Kim H J 2018 ACS Appl. Mater. Interfaces 10 12854
[23] Xu X, Yan L, Zou T, Qiu R, Liu C, Dai Q, Chen J, Zhang S and Zhou H 2018 ACS Appl. Mater. Interfaces 10 44144
[24] Na H J, Cho N K, Park J, Lee S E, Lee E G, Im C and Kim Y S 2019 J. Mater. Chem. C 7 14223
[25] Wei S, Wang F, Zou X, Wang L, Liu C, Liu X, Hu W, Fan Z, Ho J C and Liao L 2019 Adv. Mater. 32 1907527
[26] Yu H, Liu X, Yan L, Zou T, Yang H, Liu C, Zhang S and Zhou H 2019 Semicond. Sci. Technol. 34 125013
[27] Liu C K, Tai Q, Wang N, Tang G, Loi H L and Yan F 2019 Adv. Sci. 6 1900751
[28] Wang Y, Song L, Chen Y and Huang W 2019 ACS Photon. 7 10
[29] Zhao Y, Li C and Shen L 2019 InfoMat 1 164
[30] Li C, Wang H, Wang F, Li T, Xu M, Wang H, Wang Z, Zhan X, Hu W and Shen L 2020 Light Sci. Appl. 9 31
[31] Tiebin Yang F L, Rongkun Zheng 2019 ACS Appl. Electron. Mater. 1 1348
[32] Zhang C, Kuang D B and Wu W Q 2020 Small Methods 4 1900662
[33] Ramasamy P, Lim D H, Kim B, Lee S H, Lee M S and Lee J S 2016 Chem. Commun. 52 2067
[34] Bi C, Wang S, Wen W, Yuan J, Cao G and Tian J 2018 J. Phys. Chem. C 122 5151
[35] Bi C, Wang S, Li Q, Kershaw S V, Tian J and Rogach A L 2019 J. Phys. Chem. Lett. 10 943
[36] Lao X, Li X, Agren H and Chen G 2019 Nanomaterials 9 172
[37] Wang Y, Gao M L, Wu J L, Zhang X W 2019 Chin. Phys. B 28 18502
[38] Chen W, Hao J, Hu W, Zang Z, Tang X, Fang L, Niu T and Zhou M 2017 Small 13 1604085
[39] Chen Y, Chu Y, Wu X, Ou-Yang W and Huang J 2017 Adv. Mater. 29 1704062
[40] Davis N J, de la Pena F J, Tabachnyk M, Richter J M, Lamboll R D, Booker E P, Wisnivesky Rocca Rivarola F, Griffiths J T, Ducati C, Menke S M, Deschler F and Greenham N C 2017 J. Phys. Chem. C Nanomater Interfaces 121 3790
[41] Yu Y, Zhang Y, Song X, Zhang H, Cao M, Che Y, Dai H, Yang J, Zhang H and Yao J 2017 Adv. Opt. Mater. 5 1700565
[42] Cai Z, Li F, Xu W, Xia S, Zeng J, He S and Chen X 2018 Nano Res. 11 1447
[43] Liao J F, Xu Y F, Wang X D, Chen H Y and Kuang D B 2018 ACS Appl. Mater. Interfaces 10 42301
[44] Jiang D W, Xiang W, Guo F Y, Hao H Y, Han X, Li X C, Wang G W, Xu Y Q, Yu Q J and Niu Z C 2016 Chin. Phys. Lett. 33 48502
[45] Yong W, Hao L, You L X, Lv C L, Wang H Q, Zhang X Y, Zhang W J, Zhou H, Zhang L, Yang X Y and Wang Z 2019 Chin. Phys. B 28 78502
[46] Li X, Yu D, Cao F, Gu Y, Wei Y, Wu Y, Song J and Zeng H 2016 Adv. Funct. Mater. 26 5903
[47] Shao Y, Wu X, Zhang M N, Liu W J and Ding S J 2019 Nanoscale Res. Lett. 14 122
[48] Fang Y, Dong Q, Shao Y, Yuan Y and Huang J 2015 Nat. Photon. 9 679
[49] Song J, Xu L, Li J, Xue J, Dong Y, Li X and Zeng H 2016 Adv. Mater. 28 4861
[50] Chen Y, Wu X, Chu Y, Zhou J, Zhou B and Huang J 2018 Nanomicro Lett. 10 57
[51] Ma X F, Huang Y Q, Zhi Y S, Wang X, Li P G, Wu Z P and Tang W H 2019 Chin. Phys. B 28 88503
[52] Fang H and Hu W 2017 Adv. Sci. 4 1700323
[53] Long L, Cao D, Fei J, Wang J, Zhou Y, Jiang Z, Jiao Z and Shu H 2019 Chem. Phys. Lett. 734 136719
[54] Azpiroz J M, Mosconi E, Bisquert J and De Angelis F 2015 Energy Environ. Sci. 8 2118
[55] Podzorov V and Gershenson M E 2005 Phys. Rev. Lett. 95 016602

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

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