中国物理B ›› 0, Vol. ›› Issue (): 88503-088503.doi: 10.1088/1674-1056/ab9738

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进)   

  1. 1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
    2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
  • 收稿日期:2020-04-22 修回日期:2020-05-21 出版日期:2020-07-05 发布日期:2020-07-05
  • 通讯作者: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜)1, Yan Shao(邵龑)1,2, Xiao-Lin Wang(王晓琳)1, Xiaohan Wu(吴小晗)1, Wen-Jun Liu(刘文军)1, Shi-Jin Ding(丁士进)1   

  1. 1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
    2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
  • Received:2020-04-22 Revised:2020-05-21 Online:2020-07-05 Published:2020-07-05
  • Contact: Xiaohan Wu, Shi-Jin Ding E-mail:wuxiaohan@fudan.edu.cn;sjding@fudan.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).

摘要: Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX3 (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 103A·W-1, an excellent detectivity in the order of 1016 Jones, and a light-to-dark current ratio up to 105 under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

Abstract: Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX3 (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 103A·W-1, an excellent detectivity in the order of 1016 Jones, and a light-to-dark current ratio up to 105 under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

Key words: perovskite quantum dots, a-IGZO, thin-film transistor, photoresponsive characteristics

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
81.07.Ta (Quantum dots) 85.30.Tv (Field effect devices) 81.05.Gc (Amorphous semiconductors)