Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
张美娜, 邵龑, 王晓琳, 吴小晗, 刘文军, 丁士进
Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进)
中国物理B
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0, (): 88503
-088503
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DOI: 10.1088/1674-1056/ab9738