Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

doi:10.1088/1674-1056/23/2/026101

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 26101-026101.doi: 10.1088/1674-1056/23/2/026101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

陈勇跃, 王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢

Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

收稿日期:2012-12-27 修回日期:2013-07-23 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61290305 and 91021020) and the Natural Science Foundation of Zhejiang Province, China (Grant No. Z6100117).

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢)

Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received:2012-12-27 Revised:2013-07-23 Online:2013-12-12 Published:2013-12-12
Contact: Wu Hui-Zhen E-mail:hzwu@zju.edu.cn
About author:61.66.Dk; 68.55.ag; 73.61.Ga; 78.66.Hf
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61290305 and 91021020) and the Natural Science Foundation of Zhejiang Province, China (Grant No. Z6100117).

摘要/Abstract

摘要： Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO₂ as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO₂ gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm²/(V·s) and 3×10⁵ are obtained, respectively. The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

关键词: zinc tin oxide, thin-film transistors, mobility, annealing

Abstract: Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO₂ as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO₂ gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm²/(V·s) and 3×10⁵ are obtained, respectively. The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

Key words: zinc tin oxide, thin-film transistors, mobility, annealing

中图分类号: (Alloys )

61.66.Dk

68.55.ag (Semiconductors) 73.61.Ga (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)

陈勇跃, 王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢. Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor[J]. 中国物理B, 2014, 23(2): 26101-026101.

Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢). Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor[J]. Chin. Phys. B, 2014, 23(2): 26101-026101.

参考文献 35

[1]	Wang L, Yoon M H, Lu G, Yang Y, Facchetti A and Marks T J 2006 Nat. Mater. 5 893
[2]	Oh M S, Han J I, Lee K, Lee B H, Sung M M and Im S 2010 Electrochem. Solid-State Lett. 13 194
[3]	Carcia P F, McLean R S, Reilly M H and Nunes J G 2003 Appl. Phys. Lett. 82 1117
[4]	Fortunato E, Barquinha P, Pimentel A, Gonçalves A, Marques A, Pereira L and Martins R 2005 Thin Solid Films 487 205
[5]	Zhu X, Wu H, Wang S, Zhang Y, Cai C, Si J, Yuan Z, Du X and Dong S 2009 J. Semicond. 30 033001
[6]	Sun C, Mathews N, Zheng M, Sow C H, Wong L H and Mhaisalkar S G 2010 J. Phys. Chem. C 114 1331
[7]	Presley R E, Munsee C L, Park C H, Hong D, Wager J F and Keszler D A 2004 J. Phys. D: Appl. Phys. 37 2810
[8]	Dehuff N L, Kettenring E S, Hong D, Chiang H Q, Wager J F, Hoffman R L, Park C H and Keszler D A 2005 J. Appl. Phys. 97 064505
[9]	Paine D C, Yaglioglu B, Beiley Z and Lee S 2008 Thin Solid Films 516 5894
[10]	Cai X K, Yuan Z J, Zhu X M, Wang X, Zhang B P, Qiu D J and Wu H Z 2011 Chin. Phys. B 20 106103
[11]	Lim W, Douglas E A, Lee J, Jang J, Craciun V, Norton D P, Pearton S J, Ren F, Son S Y, Yuh J H, Shen H and Chang W 2009 J. Vac. Sci. Technol. B: Microelectron. Nanometer Structures 27 2128
[12]	Huang H Q, Sun J, Liu F J, Zhao J W, Hu Z F, Li Z J, Zhang X Q and Wang Y S 2011 Chin. Phys. Lett. 28 128502
[13]	Satoh K, Kakehi Y, Okamoto A, Murakami S, Moriwaki K and Yotsuya T 2008 Thin Solid Films 516 5814
[14]	Jayaraj M K, Saji K J, Nomura K, Kamiya T and Hosono H 2008 J. Vac. Sci. Technol. B: Microelectron. Nanometer Structures 26 495
[15]	Gorrn P, Lehnhardt M, Riedl T and Kowalsky W 2007 Appl. Phys. Lett. 91 193504
[16]	Seo Seok-Jun, Choi C G, Hwang Y H and Bae Byeong-Soo 2009 J. Phys. D: Appl. Phys. 42 035106
[17]	Jackson W B, Hoffman R L and Herman G S 2005 Appl. Phys. Lett. 87 193503
[18]	Chiang H Q, Wager J F, Hoffman R L, Jeong J and Keszler D A 2005 Appl. Phys. Lett. 86 013503
[19]	Cross R B M, Souza M M D, Deane S C and Young N D 2008 IEEE Trans. Electron Dev. 55 1109
[20]	Bae H S, Kim J H and Im S 2004 Solid-State Lett. 7 279
[21]	Oh B Y and Jeong M C 2007 Semicond. Sci. Technol. 22 608
[22]	Zhang L, Zhang H, Bai Y, Ma J W, Cao J, Jiang X Y and Zhang Z L 2008 Solid State Commun. 146 387
[23]	Triska J, Conley J F, Presley R and Wager J F 2009 Integrated Reliability Workshop Final Report, 2009, IRW ’09, IEEE International 86
[24]	Wager J F 2010 Journal of the Society for Information Display 18/10 749
[25]	Zhang L, Li J, Zhang X W, Jiang X Y and Zhang Z L 2010 Thin Solid Films 518 6130
[26]	Chiang H Q, McFarlane B R, Hong D, Presley R E and Wager J F 2008 J. Non-Cryst. Solids 354 2826
[27]	Moriga T, Hayashi Y, Kondo K, Nishimura Y, Murai K, Nakabayashi I, Fukumoto H and Tominaga K 2004 J. Vac. Sci. Technol. A 22 1705
[28]	Lee S, Bierig B and Paine D C 2012 Thin Solid Films 520 3764
[29]	Barquinha P, Gonçalves G, Pereira L, Martins R and Fortunato E 2007 Thin Solid Films 515 8450
[30]	Shur M S, Slade H C, Jacunski M D, Owusu A A and Ytterdal T 1997 J. Electrochem. Soc. 144 2833
[31]	Abe K, Kaji N, Kumomi H, Nomura K, Kamiya T, Hirano M and Hosono H 2011 IEEE Trans. Electron Dev. 58 3463
[32]	Shur M, Hack M and Shaw J G 1989 J. Appl. Phys. 66 3371
[33]	Colalongo L 2001 Solid-State Electronics 45 1525
[34]	Servati P and Nathan A 2002 IEEE Trans. Electron Dev. 49 812
[35]	Zhang A, Zhao X R, Duan L B, Liu J M and Zhao J L 2011 Chin. Phys. B 20 057201

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

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