Growth of threaded AlN whiskers by a physical vapor transport method

doi:10.1088/1674-1056/23/8/088103

中国物理B ›› 2014, Vol. 23 ›› Issue (8): 88103-088103.doi: 10.1088/1674-1056/23/8/088103

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Growth of threaded AlN whiskers by a physical vapor transport method

王军, 赵萌, 左思斌, 王文军

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2013-09-04 修回日期:2013-12-17 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CB932901), the National Natural Science Foundation of China (Grant Nos. 51210105026 and 51172270), and the Funds from the Chinese Academy of Sciences.

Growth of threaded AlN whiskers by a physical vapor transport method

Wang Jun (王军), Zhao Meng (赵萌), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军)

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2013-09-04 Revised:2013-12-17 Online:2014-08-15 Published:2014-08-15
Contact: Wang Wen-Jun E-mail:wjwang@aphy.iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CB932901), the National Natural Science Foundation of China (Grant Nos. 51210105026 and 51172270), and the Funds from the Chinese Academy of Sciences.

摘要/Abstract

摘要： Threaded aluminum nitride (AlN) whiskers are grown by a physical vapor transport method in a radio-frequency induction heating furnace. The resultant whiskers are characterized by X-ray diffraction, Raman scattering, scanning electron microscopy, transmission electron microscopy and photoluminescence. The analysis shows that the whiskers are single-crystalline, wurtzite AlN. The threaded AlN whiskers are 0.5 μm～ 100 μm in diameter and several millimeters in length in the fiber direction, and have lots of tiny sawteeth on the surface. The morphology of this threaded AlN whisker is beneficial for bonding when the whisker is used in composite. The growth of the whiskers is dominated by the vapor-solid (VS) mechanism, and the particular morphology might result from an oscillating condition produced in the radio-frequency induction heating furnace.

关键词: AlN, whisker, threaded morphology, physical vapor transport

Abstract: Threaded aluminum nitride (AlN) whiskers are grown by a physical vapor transport method in a radio-frequency induction heating furnace. The resultant whiskers are characterized by X-ray diffraction, Raman scattering, scanning electron microscopy, transmission electron microscopy and photoluminescence. The analysis shows that the whiskers are single-crystalline, wurtzite AlN. The threaded AlN whiskers are 0.5 μm～ 100 μm in diameter and several millimeters in length in the fiber direction, and have lots of tiny sawteeth on the surface. The morphology of this threaded AlN whisker is beneficial for bonding when the whisker is used in composite. The growth of the whiskers is dominated by the vapor-solid (VS) mechanism, and the particular morphology might result from an oscillating condition produced in the radio-frequency induction heating furnace.

Key words: AlN, whisker, threaded morphology, physical vapor transport

中图分类号: (III-V semiconductors)

81.05.Ea

81.10.Bk (Growth from vapor)

王军, 赵萌, 左思斌, 王文军. Growth of threaded AlN whiskers by a physical vapor transport method[J]. 中国物理B, 2014, 23(8): 88103-088103.

Wang Jun (王军), Zhao Meng (赵萌), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军). Growth of threaded AlN whiskers by a physical vapor transport method[J]. Chin. Phys. B, 2014, 23(8): 88103-088103.

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Growth of threaded AlN whiskers by a physical vapor transport method

Growth of threaded AlN whiskers by a physical vapor transport method

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