中国物理B ›› 2017, Vol. 26 ›› Issue (1): 16103-016103.doi: 10.1088/1674-1056/26/1/016103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Studies on the nucleation of MBE grown III-nitride nanowires on Si

Yanxiong E(鄂炎雄), Zhibiao Hao(郝智彪), Jiadong Yu(余佳东), Chao Wu(吴超), Lai Wang(汪莱), Bing Xiong(熊兵), Jian Wang(王健), Yanjun Han(韩彦军), Changzheng Sun(孙长征), Yi Luo(罗毅)   

  1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2016-02-03 修回日期:2016-09-10 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: Zhibiao Hao E-mail:zbhao@tsinghua.edu.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632804), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

Studies on the nucleation of MBE grown III-nitride nanowires on Si

Yanxiong E(鄂炎雄), Zhibiao Hao(郝智彪), Jiadong Yu(余佳东), Chao Wu(吴超), Lai Wang(汪莱), Bing Xiong(熊兵), Jian Wang(王健), Yanjun Han(韩彦军), Changzheng Sun(孙长征), Yi Luo(罗毅)   

  1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2016-02-03 Revised:2016-09-10 Online:2017-01-05 Published:2017-01-05
  • Contact: Zhibiao Hao E-mail:zbhao@tsinghua.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632804), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

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摘要： GaN and AlN nanowires (NWs) have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy (MBE) are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of III group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.

关键词: GaN nanowires, AlN nanowires, strain, nucleation

Abstract: GaN and AlN nanowires (NWs) have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy (MBE) are investigated. It is found that GaN NWs nucleated on in-situ formed Si3N4 fully release the stress upon the interface between GaN NW and amorphous Si3N4 layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of III group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.

Key words: GaN nanowires, AlN nanowires, strain, nucleation

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
61.72.Hh (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)) 64.60.Q- (Nucleation)