中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38506-038506.doi: 10.1088/1674-1056/23/3/038506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors

李冲, 薛春来, 刘智, 成步文, 李传波, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-07-20 修回日期:2013-08-13 出版日期:2014-03-15 发布日期:2014-03-15

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors

Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Chuan-Bo (李传波), Wang Qi-Ming (王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-07-20 Revised:2013-08-13 Online:2014-03-15 Published:2014-03-15
  • Contact: Xue Chun-Lai E-mail:clxue@semi.ac.cn

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摘要： We report efficient zero-bias high-speed top-illuminated p–i–n photodiodes (PDs) with high responsivity fabricated with germanium (Ge) films grown directly on silicon-on-insulator (SOI) substrates. For a 15 μm-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at –1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-μ-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.

关键词: germanium, photodetectors, integrated optoelectronics, optical interconnections

Abstract: We report efficient zero-bias high-speed top-illuminated p–i–n photodiodes (PDs) with high responsivity fabricated with germanium (Ge) films grown directly on silicon-on-insulator (SOI) substrates. For a 15 μm-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at –1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-μ-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.

Key words: germanium, photodetectors, integrated optoelectronics, optical interconnections

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays) 85.30.De (Semiconductor-device characterization, design, and modeling) 42.79.Sz (Optical communication systems, multiplexers, and demultiplexers?)