Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors

doi:10.1088/1674-1056/ab4e87

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/ab4e87

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors

Cheng-Yun Hong(洪成允), Gang-Feng Huang(黄刚锋), Wen-Wen Yao(要文文), Jia-Jun Deng(邓加军), Xiao-Long Liu(刘小龙)

1 Renewable Energy School, North China Electric Power University, Beijing 102206, China;
2 Department of Mathematics and Physics, North China Electric Power University, Beijing 102206, China;
3 State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources and Beijing Key Laboratory of Energy Safety and Clean Utilization, North China Electric Power University, Beijing 102206, China

收稿日期:2019-08-22 修回日期:2019-10-11 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Xiao-Long Liu E-mail:xl.liu@ncepu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors

Cheng-Yun Hong(洪成允)¹, Gang-Feng Huang(黄刚锋)¹, Wen-Wen Yao(要文文)², Jia-Jun Deng(邓加军)², Xiao-Long Liu(刘小龙)^1,3

1 Renewable Energy School, North China Electric Power University, Beijing 102206, China;
2 Department of Mathematics and Physics, North China Electric Power University, Beijing 102206, China;
3 State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources and Beijing Key Laboratory of Energy Safety and Clean Utilization, North China Electric Power University, Beijing 102206, China

Received:2019-08-22 Revised:2019-10-11 Online:2019-12-05 Published:2019-12-05
Contact: Xiao-Long Liu E-mail:xl.liu@ncepu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).

摘要/Abstract

摘要： Bi₂O₂Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi₂O₂Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi₂O₂Se are thickness-dependent, the in-plane Bi₂O₂Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition (CVD) method across the terraces on the mica substrates, where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi₂O₂Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 10², what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 \upmus. Comparing with the Bi₂O₂Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.

关键词: Bi₂O₂Se, in-plane homojunction, thickness modulation, photodetectors

Abstract: Bi₂O₂Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi₂O₂Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi₂O₂Se are thickness-dependent, the in-plane Bi₂O₂Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition (CVD) method across the terraces on the mica substrates, where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi₂O₂Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 10², what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 \upmus. Comparing with the Bi₂O₂Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.

Key words: Bi₂O₂Se, in-plane homojunction, thickness modulation, photodetectors

中图分类号: (Photodiodes; phototransistors; photoresistors)

85.60.Dw

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 71.20.Nr (Semiconductor compounds)

洪成允, 黄刚锋, 要文文, 邓加军, 刘小龙. Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors[J]. 中国物理B, 2019, 28(12): 128502-128502.

Cheng-Yun Hong(洪成允), Gang-Feng Huang(黄刚锋), Wen-Wen Yao(要文文), Jia-Jun Deng(邓加军), Xiao-Long Liu(刘小龙). Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors[J]. Chin. Phys. B, 2019, 28(12): 128502-128502.

参考文献 27

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666 doi: 10.1126/science.1102896
[2]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G and Wang F 2010 Nano. Lett. 10 1271 doi: 10.1021/nl903868w
[3]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L and Hone J 2010 Nat. Nanotech. 5 722 doi: 10.1038/nnano.2010.172
[4]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H and Zhang Y 2014 Nat. Nanotech. 9 372 doi: 10.1038/nnano.2014.35
[5]	Xu X, Gabor N M, Alden J S, van der Zande A M and McEuen P L 2010 Nano Lett. 10 562 doi: 10.1021/nl903451y
[6]	Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 150 136805
[7]	Fu X W, Liao Z M, Zhou Y B, Wu H C, Bie Y Q, Xu J and Yu D P 2012 Appl. Phys. Lett. 100 223114 doi: 10.1063/1.4724208
[8]	Li H, Li X M, Park J H, Tao L, Kim K K, Lee Y H and Xu J B 2019 Nano Energy 57 214 doi: 10.1016/j.nanoen.2018.12.004
[9]	Kufer D and Konstantatos G 2015 Nano Lett. 15 7307 doi: 10.1021/acs.nanolett.5b02559
[10]	Zhang W, Huang J K, Chen C H, Chang Y H, Cheng Y J and Li L J 2013 Adv. Mater. 25 3456 doi: 10.1002/adma.201301244
[11]	Lee C H, Lee G H, van der Zande A M, Chen W, Li Y, Han M, Cui X, Arefe G, Nuckolls C, Heinz T F, Guo J, Hone J and Kim P 2014 Nat. Nanotech. 9 676 doi: 10.1038/nnano.2014.150
[12]	Withers F, Pozo-Zamudio O D, Mishchenko A, Rooney A P, Gholinia A, Watanabe K, Taniguchi T, Haigh S J Geim A K, Tartakovskii A I and Novoselov K S 2015 Nat. Mater. 14 301 doi: 10.1038/nmat4205
[13]	Qi Y, Han N, Li Y, Zhang Z, Zhou X, Deng B, Li Q, Liu M, Zhao J, Liu Z and Zhang Y 2017 ACS Nano 11 1807 doi: 10.1021/acsnano.6b07773
[14]	Zheng B, Ma C, Li D, Lan J, Zhang Z, Sun X, Zheng W, Yang T, Zhu C, Ouyang G, Xu G, Zhu X, Wang X and Pan A 2018 J. Am. Chem. Soc. 140 11193 doi: 10.1021/jacs.8b07401
[15]	Katagiri Y, Nakamura T, Ishii A, Ohata C, Hasegawa M, Katsumoto S, Cusati T, Fortunelli A, Iannaccone G, Fiori G, Roche S and Haruyama J 2016 Nano Lett. 16 3788 doi: 10.1021/acs.nanolett.6b01186
[16]	Sun Q Q, Li Y J, He J L, Yang W, Zhou P, Lu H L, Ding S J and Zhang W D 2013 Appl. Phys. Lett. 102 093104 doi: 10.1063/1.4794802
[17]	Groenendijk D J, Buscema M, Steele G A, Michaelis de Vasconcellos S, Bratschitsch R, van der Zant H S and Castellanos-Gomez A 2014 Nano Lett. 14 5846 doi: 10.1021/nl502741k
[18]	Wu J, Yuan H, Meng M, Chen C, Sun Y, Chen Z, Dang W, Tan C, Liu Y, Yin J, Zhou Y, Huang S, Xu H Q, Cui Y, Hwang H Y, Liu Z, Chen Y, Yan B and Peng H 2017 Nat. Nanotechnol. 12 530 doi: 10.1038/nnano.2017.43
[19]	Wu J, Tan C, Tan Z, Liu Y, Yin J, Dang W, Wang M and Peng H 2017 Nano Lett. 17 3021 doi: 10.1021/acs.nanolett.7b00335
[20]	Chen C, Wang M, Wu J, Fu H, Yang H, Tian Z, Tu T, Peng H, Sun Y, Xu X, Jiang J, Schroter N B M, Li Y, Pei D, Liu S, Ekahana S A, Yuan H, Xue J, Li G, Jia J, Liu Z, Yan B, Peng H and Chen Y 2018 Sci. Adv. 4 eaat8355
[21]	Yin J, Tan Z, Hong H, Wu J, Yuan H, Liu Y, Chen C, Tan C, Yao F, Li T, Chen Y, Liu Z, Liu K and Peng H 2018 Nat. Commun. 9 3311 doi: 10.1038/s41467-018-05874-2
[22]	Li J, Wang Z, Wen Y, Chu J, Yin L, Cheng R, Lei L, He P, Jiang C, Feng L and He J 2018 Adv. Funct. Mater. 28 1706437 doi: 10.1002/adfm.201706437
[23]	Fu Q, Zhu C, Zhao X, Wang X, Chaturvedi A, Zhu C, Wang X, Zeng Q, Zhou J, Liu F, Tay B K, Zhang H, Pennycook S J and Liu Z 2019 Adv. Mater. 31 1804945 doi: 10.1002/adma.201804945
[24]	Fang H and Hu W 2017 Adv. Sci. 4 1700323 doi: 10.1002/advs.201700323
[25]	Liu X, Luo X, Nan H, Guo H, Wang P, Zhang L, Zhou M, Yang Z, Shi Y, Hu W, Ni Z, Qiu T, Yu Z, Xu J B and Wang X 2016 Adv. Mat. 28 5200 doi: 10.1002/adma.201600400
[26]	Choi M S, Qu D, Lee D, Liu X, Watanabe K, Taniguchi T and Yoo W J 2014 ACS Nano 8 9332 doi: 10.1021/nn503284n
[27]	Ye L, Li Hao, Chen Z and Xu J B 2016 ACS Photon. 3 692 doi: 10.1021/acsphotonics.6b00079

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors

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