中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1405-1409.doi: 10.1088/1009-1963/16/5/039

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

薛守斌, 庄惠照, 薛成山, 胡丽君, 李保理, 张士英   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, China
  • 收稿日期:2006-08-03 修回日期:2006-01-15 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No~90201025) and the National Natural Science Foundation of China (Grant No~90301002).

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Xue Shou-Bin(薛守斌), Zhuang Hui-Zhao(庄惠照)†, Xue Cheng-Shan(薛成山), Hu Li-Jun(胡丽君), Li Bao-Li(李保理), and Zhang Shi-Ying(张士英)   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, China
  • Received:2006-08-03 Revised:2006-01-15 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No~90201025) and the National Natural Science Foundation of China (Grant No~90301002).

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摘要： Flower-shape clustering GaN nanorods are successfully synthesized on Si(111) substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.

Abstract: Flower-shape clustering GaN nanorods are successfully synthesized on Si(111) substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.

Key words: GaN, magnetron sputtering, ammoniate

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
61.05.cp (X-ray diffraction) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 78.30.Fs (III-V and II-VI semiconductors) 78.55.Cr (III-V semiconductors) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)