Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe2 FETs

doi:10.1088/1674-1056/adb270

中国物理B ›› 2025, Vol. 34 ›› Issue (4): 46106-046106.doi: 10.1088/1674-1056/adb270

Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe₂ FETs

Shifan Gao(高诗凡)^1,2, Siyuan Ma(马思远)², Shengxia Zhang(张胜霞)^2,‡, Pengliang Zhu(朱彭靓)², Jie Liu(刘杰)², Lijun Xu(徐丽君)², Pengfei Zhai(翟鹏飞)², Peipei Hu(胡培培)², and Yan Li(李燕)^1,†

1 Northwest Normal University (NWNU), Lanzhou 730070, China;
2 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China

收稿日期:2025-01-02 修回日期:2025-02-01 接受日期:2025-02-05 出版日期:2025-04-15 发布日期:2025-04-15
通讯作者: Yan Li, Shengxia Zhang E-mail:liyan-nwnu@163.com;zhangsx@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12375261, 12175287, 12205350, and 62234013) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2022424).

Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe₂ FETs

1 Northwest Normal University (NWNU), Lanzhou 730070, China;
2 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China

Received:2025-01-02 Revised:2025-02-01 Accepted:2025-02-05 Online:2025-04-15 Published:2025-04-15
Contact: Yan Li, Shengxia Zhang E-mail:liyan-nwnu@163.com;zhangsx@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12375261, 12175287, 12205350, and 62234013) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2022424).

摘要/Abstract

摘要： Influences of swift heavy ion (SHI) irradiation induced defects on electronic properties of the bulk SnSe$_{2}$ based FETs are explored. Latent tracks and amounts of Se vacancies in the irradiated SnSe$_{2}$ were confirmed. Red shift of the A$_{\rm 1g}$ peak indicates that the resonance frequency of the phonons is reduced due to the defect generation in SnSe$_{2}$. The source-drain current $I_{\rm ds}$ increased at ion fluence of 1$\times10^{10}$ ions$\cdot$cm$^{-2}$, which was attributeded to the irradiation caused Se vacancies, which hence increases the concentration of conduction electrons. The carrier mobility was about 16.9 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ for the devices irradiated at ion fluence of 1$\times10^{9}$ ions$\cdot$cm$^{-2}$, which benefited from heavy ion irradiation enhanced interlayer coupling. The mechanism of device performance optimization after irradiation is discussed in detail. This work provides evidence that, given the electronic properties of two-dimensional material-based device, vacancies and interlayer coupling effects caused by SHI irradiation should not be ignored.

关键词: heavy ion irradiation, electronic transport in nanoscale, materials structures, radiation damage, semiconductor devices

Abstract: Influences of swift heavy ion (SHI) irradiation induced defects on electronic properties of the bulk SnSe$_{2}$ based FETs are explored. Latent tracks and amounts of Se vacancies in the irradiated SnSe$_{2}$ were confirmed. Red shift of the A$_{\rm 1g}$ peak indicates that the resonance frequency of the phonons is reduced due to the defect generation in SnSe$_{2}$. The source-drain current $I_{\rm ds}$ increased at ion fluence of 1$\times10^{10}$ ions$\cdot$cm$^{-2}$, which was attributeded to the irradiation caused Se vacancies, which hence increases the concentration of conduction electrons. The carrier mobility was about 16.9 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ for the devices irradiated at ion fluence of 1$\times10^{9}$ ions$\cdot$cm$^{-2}$, which benefited from heavy ion irradiation enhanced interlayer coupling. The mechanism of device performance optimization after irradiation is discussed in detail. This work provides evidence that, given the electronic properties of two-dimensional material-based device, vacancies and interlayer coupling effects caused by SHI irradiation should not be ignored.

Key words: heavy ion irradiation, electronic transport in nanoscale, materials structures, radiation damage, semiconductor devices

中图分类号: (Ion radiation effects)

61.80.Jh

73.63.-b (Electronic transport in nanoscale materials and structures) 85.30.-z (Semiconductor devices)

Shifan Gao(高诗凡), Siyuan Ma(马思远), Shengxia Zhang(张胜霞), Pengliang Zhu(朱彭靓), Jie Liu(刘杰), Lijun Xu(徐丽君), Pengfei Zhai(翟鹏飞), Peipei Hu(胡培培), and Yan Li(李燕). Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe₂ FETs[J]. 中国物理B, 2025, 34(4): 46106-046106.

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Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe₂ FETs

Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe₂ FETs

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