Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe
2 FETs
Shifan Gao(高诗凡), Siyuan Ma(马思远), Shengxia Zhang(张胜霞), Pengliang Zhu(朱彭靓), Jie Liu(刘杰), Lijun Xu(徐丽君), Pengfei Zhai(翟鹏飞), Peipei Hu(胡培培), and Yan Li(李燕)
Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe
2 FETs
Shifan Gao(高诗凡), Siyuan Ma(马思远), Shengxia Zhang(张胜霞), Pengliang Zhu(朱彭靓), Jie Liu(刘杰), Lijun Xu(徐丽君), Pengfei Zhai(翟鹏飞), Peipei Hu(胡培培), and Yan Li(李燕)
中国物理B
.
2025, (4): 46106
-046106
.
DOI: 10.1088/1674-1056/adb270