[1] Lei J C, Wei J, G. Tang G F, Zhang Z F, Qian Q K, Zheng Z Y, Hua M Y and Chen K J 2018 IEEE Electron Dev. Lett. 39 260 [2] Zhang T, Zhang Y N, Zhang J C, Li X D, Lv Y G and Hao Y 2021 IEEE Electron Dev. Lett. 42 304 [3] Zhang T, Zhang J, Zhou H, Chen T S, Zhang K, Hu Z Z, Bian Z K, Dang K, Wang Y, Zhang L, Ning J, Ma P J and Hao Y 2018 IEEE Electron Dev. Lett. 39 1548 [4] Xiao M, Ma Y W, Cheng K, Liu K, Xie A, Cao Y and Zhang Y H 2020 IEEE Electron Dev. Lett. 41 1177 [5] Lee H S, Jung D Y, Park Y, Na J, Jang H G, Lee H S, Jun C H, Park J, Ryu S O, Ko S C and Nam E S 2015 IEEE Electron Dev. Lett. 36 1132 [6] Khanna S K, Webb J, Tang H, Houdayer A J and Carlone C 2000 IEEE Trans Nucl. Sci. 47 2322 [7] Hu X, Karmarkar A P, Jun B, Fleetwood D M, Schrimpf R D, Geil R D, Weller R A, White B D, Bataiev M, Brillson L J and Mishra U K 2003 IEEE Trans Nucl. Sci. 50 1791 [8] Anderson T J, Koehler A D, Greenlee J D, Weaver B D, Mastro M A, Hite J K, Eddy C R, Kub F J and Hobart K D 2014 IEEE Electron Dev. Lett. 35 826 [9] Karmarkar A P, Jun B, Fleetwood D M, Schrimpf R D, Weller R A, White B D, Brillson L J and Mishra U K 2004 IEEE Trans. Nucl. Sci. 51 3801 [10] Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi Y Y, Ren F, Pearton S J, Lo C F, Johnson J W and Danilova E 2013 Appl. Phys. Lett. 102 062102 [11] Nela L, Yildirim H K, Erine C, Erp R V, Xiang P, Cheng K and Matioli E 2021 IEEE Electron Dev. Lett. 42 86 [12] Nela L, Erp R V, Kampitsis G, Yildirim H K, Ma J and Matioli E 2021 IEEE Trans. Power Electron. 36 1269 [13] Gao J N, J in Y F, Xie B, Wen C P, Hao Y L, Shen B and Wang M J 2018 IEEE Electron Dev. Lett. 39 859 [14] Zhu M D, Song B, Qi M, Hu Z Y, Nomoto K, Yan X D, Cao Y, Johnson W, Kohn E, Jena D and Xing H L 2015 IEEE Electron Dev. Lett. 36 375 [15] Tsou C W, Wei K P, Lian Y W and Hsu S S H 2016 IEEE Electron Dev. Lett. 37 70 [16] Bahat-Treidel E, Hilt O, Zhytnyska R, Wentzel A, Meliani C, Wurfl J and Trankle G 2012 IEEE Electron Dev. Lett. 33 357 [17] Hao R H, Li W Y, Fu K, Yu G H, Song L, Yuan J, Li J S, Deng X G, Zhang X D, Zhou Q, Fan Y M, Shi W H, Cai Y, Zhang X P and Zhang B S 2017 IEEE Electron Dev. Lett. 38 1567 [18] Arulkumaran S, Egawa T and Ishikawa H 2005 Jpn. J. Appl. Phys. 44 2953 [19] Zhang T, Lv Y G, Li R H, Zhang Y N, Zhang Y C, Li X D, Zhang J C and Hao Y 2021 IEEE Electron Dev. Lett. 42 477 [20] Hu J, Stoffels S, Lenci S, Lenci S, Groeseneken G and Decoutere S 2016 IEEE Electron Dev. Lett. 37 310 [21] Hu J, Stoffels S, Lenci S, Ronchi N, Venegas R, You S, Bakeroot B, Groeseneken G and Decoutere S 2014 Microelectronics Reliability 54 2196 [22] Vetury R, Zhang N Q Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Dev. 48 560 [23] Braga N and Mickevicius R 2004 Appl. Phys. Lett. 85 4780 [24] Weaver B D, Martin P A, Boos J B and Cress C D 2012 IEEE Trans. Nucl. Sci. 59 3077 [25] Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L and Mishra U K 2003 IEEE Trans. Electron Dev. 50 2326 |