中国物理B ›› 2023, Vol. 32 ›› Issue (1): 18103-018103.doi: 10.1088/1674-1056/aca9c2

所属专题： SPECIAL TOPIC — Physics in micro-LED and quantum dots devices

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Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets

Zhaoxia Bi(毕朝霞)†, Anders Gustafsson, and Lars Samuelson   

  1. Division of Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
  • 收稿日期:2022-08-25 修回日期:2022-11-01 接受日期:2022-12-08 出版日期:2022-12-08 发布日期:2023-01-03
  • 通讯作者: Zhaoxia Bi E-mail:Zhaoxia.Bi@ftf.lth.se
  • 基金资助:
    The authors would like to thank Taiping Lu, Reine Wallenberg and Bo Monemar for valuable inputs to this project. The research was performed at LundNano Lab, a part of the MyFab-facilities. The project was supported by the Swedish Research Council (VR), the Foundation for Strategic Research (SSF), the Knut and Alice Wallenberg foundation (KAW), the Swedish Energy Agency and Sweden's innovation agency (VINNOVA).

Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets

Zhaoxia Bi(毕朝霞)†, Anders Gustafsson, and Lars Samuelson   

  1. Division of Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
  • Received:2022-08-25 Revised:2022-11-01 Accepted:2022-12-08 Online:2022-12-08 Published:2023-01-03
  • Contact: Zhaoxia Bi E-mail:Zhaoxia.Bi@ftf.lth.se
  • Supported by:
    The authors would like to thank Taiping Lu, Reine Wallenberg and Bo Monemar for valuable inputs to this project. The research was performed at LundNano Lab, a part of the MyFab-facilities. The project was supported by the Swedish Research Council (VR), the Foundation for Strategic Research (SSF), the Knut and Alice Wallenberg foundation (KAW), the Swedish Energy Agency and Sweden's innovation agency (VINNOVA).

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摘要： Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions, augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication, etc. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls. Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal-organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μ in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.

关键词: microLEDs, RGB, GaN, InGaN

Abstract: Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions, augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication, etc. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls. Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal-organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μ in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.

Key words: microLEDs, RGB, GaN, InGaN

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
85.60.Jb (Light-emitting devices) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)