Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

doi:10.1088/1674-1056/ac673e

中国物理B ›› 2022, Vol. 31 ›› Issue (8): 88101-088101.doi: 10.1088/1674-1056/ac673e

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

Tianyuan Song(宋天源)¹, Dongli Zhang(张冬利)^1,†, Mingxiang Wang(王明湘)¹, and Qi Shan(单奇)²

1 School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China;
2 Visionox Technology Co., Ltd, Suzhou 215006, China

收稿日期:2022-01-05 修回日期:2022-04-11 接受日期:2022-04-14 出版日期:2022-07-18 发布日期:2022-08-02
通讯作者: Dongli Zhang E-mail:dongli_zhang@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20201201), the Fund from Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the State Key Laboratory of ASIC and System, Fudan University, (Grant No. 2021KF005).

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

Tianyuan Song(宋天源)¹, Dongli Zhang(张冬利)^1,†, Mingxiang Wang(王明湘)¹, and Qi Shan(单奇)²

1 School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China;
2 Visionox Technology Co., Ltd, Suzhou 215006, China

Received:2022-01-05 Revised:2022-04-11 Accepted:2022-04-14 Online:2022-07-18 Published:2022-08-02
Contact: Dongli Zhang E-mail:dongli_zhang@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20201201), the Fund from Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the State Key Laboratory of ASIC and System, Fudan University, (Grant No. 2021KF005).

摘要/Abstract

摘要： Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated, and the corresponding degradation mechanism is proposed and verified. The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time. Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism. The observed degradation phenomena, including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale, current crowding in the output curve, and smaller degradation in transfer curves measured under large drain bias, can all be well explained with the proposed degradation mechanism.

关键词: a-IGZO, thin-film transistors, hot-carrier effects

Abstract: Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated, and the corresponding degradation mechanism is proposed and verified. The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time. Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism. The observed degradation phenomena, including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale, current crowding in the output curve, and smaller degradation in transfer curves measured under large drain bias, can all be well explained with the proposed degradation mechanism.

Key words: a-IGZO, thin-film transistors, hot-carrier effects

中图分类号: (Amorphous semiconductors)

81.05.Gc

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases[J]. 中国物理B, 2022, 31(8): 88101-088101.

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Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

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