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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701. |
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Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科). Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy[J]. 中国物理B, 2023, 32(2): 26802-026802. |
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Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101. |
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Na-Na Su(苏娜娜), Qing-Bang Han(韩庆邦), Ming-Lei Shan(单鸣雷), and Cheng Yin(殷澄). Effect of porous surface layer on wave propagation in elastic cylinder immersed in fluid[J]. 中国物理B, 2023, 32(1): 14301-014301. |
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Fazal Haq, Muhammad Ijaz Khan, Sami Ullah Khan, Khadijah M Abualnaja, and M A El-Shorbagy. Physical aspects of magnetized Jeffrey nanomaterial flow with irreversibility analysis[J]. 中国物理B, 2022, 31(8): 84703-084703. |
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Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Introducing voids around the interlayer of AlN by high temperature annealing[J]. 中国物理B, 2022, 31(7): 76104-076104. |
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Jia-Hao Xu(徐家豪), Xing-Feng Zhu(朱兴凤), Di-Chao Chen(陈帝超), Qi Wei(魏琦), and Da-Jian Wu(吴大建). Broadband low-frequency acoustic absorber based on metaporous composite[J]. 中国物理B, 2022, 31(6): 64301-064301. |
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Fu-Wei Liu(刘福伟), Fei Zhong(钟飞), Shi-Chao Wang(王世超), Wen-He Xie(谢文合), Xue Chen(陈雪), Ya-Ge Hu(胡亚歌), Yu-Ying Ge(葛钰莹), Yuan Gao(郜源), Lei Wang(王雷), and Zi-Qi Liang(梁子骐). Facile fabrication of highly flexible, porous PEDOT: PSS/SWCNTs films for thermoelectric applications[J]. 中国物理B, 2022, 31(2): 27303-027303. |
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Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701. |
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Khaled S. Mekheimer, Soliman R. Komy, and Sara I. Abdelsalam. Erratum to “Simultaneous effects of magnetic field and space porosity on compressible Maxwell fluid transport induced by a surface acoustic wave in a microchannel”[J]. 中国物理B, 2021, 30(9): 99901-099901. |
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Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰). Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE[J]. 中国物理B, 2021, 30(6): 67306-067306. |
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李红星, 陶春辉, 刘财, 黄光南, 姚振岸. Frequency-dependent reflection of elastic wave from thin bed in porous media[J]. 中国物理B, 2020, 29(6): 64301-064301. |
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黄永平, 姚峰, 周博, 张程宾. Numerical study on permeability characteristics of fractal porous media[J]. 中国物理B, 2020, 29(5): 54701-054701. |
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宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃. High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. 中国物理B, 2020, 29(5): 57307-057307. |