中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47701-047701.doi: 10.1088/1674-1056/ac3223

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Ji-Yao Du(都继瑶)1, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2,†, and Jin-Ping Ao(敖金平)2   

  1. 1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
    2 Institute of Technology and Science, Tokushima University, Tokushima, Japan
  • 收稿日期:2021-06-03 修回日期:2021-10-14 接受日期:2021-10-22 出版日期:2022-03-16 发布日期:2022-03-16
  • 通讯作者: Tao-Fei Pu E-mail:fbc_ptf@126.com
  • 基金资助:
    This work was supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University (Grant No. 1010147000914) and the Science and Technology Program of Ningbo (Grant No. 2019B10129).

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Ji-Yao Du(都继瑶)1, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2,†, and Jin-Ping Ao(敖金平)2   

  1. 1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
    2 Institute of Technology and Science, Tokushima University, Tokushima, Japan
  • Received:2021-06-03 Revised:2021-10-14 Accepted:2021-10-22 Online:2022-03-16 Published:2022-03-16
  • Contact: Tao-Fei Pu E-mail:fbc_ptf@126.com
  • Supported by:
    This work was supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University (Grant No. 1010147000914) and the Science and Technology Program of Ningbo (Grant No. 2019B10129).

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摘要： Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.

关键词: GaN, temperature sensor, Schottky contact, vertical diode

Abstract: Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.

Key words: GaN, temperature sensor, Schottky contact, vertical diode

中图分类号:  (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

  • 77.84.Bw
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 52.59.Mv (High-voltage diodes) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))