×
模态框（Modal）标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框（Modal）标题
在这里添加一些文本
关闭
Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平)
Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平)
中国物理B . 2022, (
4
): 47701 -047701 . DOI: 10.1088/1674-1056/ac3223