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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
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Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films[J]. 中国物理B, 2023, 32(3): 38101-038101. |
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Xiaohua Li(李晓华), Baoji Wang(王宝基), and Sanhuang Ke(柯三黄). Blue phosphorene/MoSi2N4 van der Waals type-II heterostructure: Highly efficient bifunctional materials for photocatalytics and photovoltaics[J]. 中国物理B, 2023, 32(2): 27104-027104. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503. |
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Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Enhanced single photon emission in silicon carbide with Bull's eye cavities[J]. 中国物理B, 2022, 31(10): 104206-104206. |
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Chen Zhou(周臣), Wang-Ping Cheng(程王平), Yuan-Di He(何媛娣), Cheng Shao(邵成), Ling Hu(胡令), Ren-Huai Wei(魏仁怀), Jing-Gang Qin(秦经刚), Wen-Hai Song(宋文海), Xue-Bin Zhu(朱雪斌), Chuan-Bing Cai(蔡传兵), and Yu-Ping Sun(孙玉平). Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors[J]. 中国物理B, 2022, 31(10): 107305-107305. |
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Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳). Atomic and electronic structures of p-type dopants in 4H-SiC[J]. 中国物理B, 2021, 30(9): 96806-096806. |
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Hui Wan(万惠), Zhixiao Liu(刘智骁), Guangdong Liu(刘广东), Shuaiyu Yi(易帅玉), Fei Gao(高飞), Huiqiu Deng(邓辉球), Dingwang Yuan(袁定旺), and Wangyu Hu(胡望宇). A strategy to improve the electrochemical performance of Ni-rich positive electrodes: Na/F-co-doped LiNi0.6Mn0.2Co0.2O2[J]. 中国物理B, 2021, 30(7): 73101-073101. |
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Yong-Peng Shi(时永鹏), Ming-Feng Liu(刘鸣凤), Yun Chen(陈云), Wen-Lin Mo(莫文林), Dian-Zhong Li(李殿中), Tao Fa(法涛), Bin Bai(白彬), Xiao-Lin Wang(汪小琳), and Xing-Qiu Chen(陈星秋). Ab initio study of dynamical properties of U-Nb alloy melt[J]. 中国物理B, 2021, 30(12): 126105-126105. |
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蔡小龙, 周东, 程亮, 任芳芳, 钟宏, 张荣, 郑有炓, 陆海. Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses[J]. 中国物理B, 2019, 28(9): 98503-098503. |
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李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303. |
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刘青, 蒲红斌, 王曦. Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time[J]. 中国物理B, 2019, 28(12): 127201-127201. |
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H Noverola-Gamas, L M Gaggero-Sager, O Oubram. Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells[J]. 中国物理B, 2019, 28(12): 124207-124207. |
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袁昊, 宋庆文, 韩超, 汤晓燕, 何晓宁, 张玉明, 张义门. Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure[J]. 中国物理B, 2019, 28(11): 117303-117303. |