Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

doi:10.1088/1674-1056/ac248f

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17803-017803.doi: 10.1088/1674-1056/ac248f

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

Xiao-Bo He(何小波)^1,2, Hua-Tian Hu(胡华天)³, Ji-Bo Tang(唐继博)³, Guo-Zhen Zhang(张国桢)¹, Xue Chen(陈雪)¹, Jun-Jun Shi(石俊俊)², Zhen-Wei Ou(欧振伟)¹, Zhi-Feng Shi(史志锋)⁴, Shun-Ping Zhang(张顺平)^1,†, Chang Liu(刘昌)^1,‡, and Hong-Xing Xu(徐红星)^1,3,§

1 School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China;
2 Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
3 The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China;
4 Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

收稿日期:2021-03-24 修回日期:2021-06-16 接受日期:2021-09-08 出版日期:2021-12-03 发布日期:2021-12-30
通讯作者: Shun-Ping Zhang, Chang Liu, Hong-Xing Xu E-mail:spzhang@whu.edu.cn;chang.liu@whu.edu.cn;hxxu@whu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12004222 and 91850207), the National Key Research and Development Program of China (Grant Nos. 2017YFA0303504 and 2017YFA0205800), the Fundamental Research Funds for the Central Universities, China, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), and the Postdoctoral Science Foundation of China (Grant No. 2020M682223).

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

1 School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China;
2 Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
3 The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China;
4 Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

Received:2021-03-24 Revised:2021-06-16 Accepted:2021-09-08 Online:2021-12-03 Published:2021-12-30
Contact: Shun-Ping Zhang, Chang Liu, Hong-Xing Xu E-mail:spzhang@whu.edu.cn;chang.liu@whu.edu.cn;hxxu@whu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12004222 and 91850207), the National Key Research and Development Program of China (Grant Nos. 2017YFA0303504 and 2017YFA0205800), the Fundamental Research Funds for the Central Universities, China, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), and the Postdoctoral Science Foundation of China (Grant No. 2020M682223).

1. 2022-017803-SI.pdf(518KB)

摘要/Abstract

摘要： Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process. It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits. However, existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques, which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up. Here in this work, we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier. For the first time, we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions. Uniform electroluminescence is observed over the entire active region, with the emission spectrum shaped by metallic grating plasmons. The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier. The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.

关键词: electroluminescence, plasmonics, inelastic electron tunneling, multilayer insulator, atomic layer deposition

Abstract: Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process. It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits. However, existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques, which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up. Here in this work, we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier. For the first time, we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions. Uniform electroluminescence is observed over the entire active region, with the emission spectrum shaped by metallic grating plasmons. The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier. The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.

Key words: electroluminescence, plasmonics, inelastic electron tunneling, multilayer insulator, atomic layer deposition

中图分类号: (Electroluminescence)

78.60.Fi

78.66.-w (Optical properties of specific thin films)

Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers[J]. 中国物理B, 2022, 31(1): 17803-017803.

参考文献

[1] Parzefall M and Novotny L 2019 Rep. Prog. Phys. 82 112401
[2] Liu L F, Xu Y, Zhu J J, Wang P, Tong L M and Krasavin A V 2020 Frontiers in Physics 8 251
[3] Dathe A, Ziegler M, Hübner U, Fritzsche W and Stranik O 2016 Nano Lett. 16 5728
[4] Wang P, Nasir M E, Krasavin A V, Dickson W and Zayats A V 2020 Nano Lett. 20 1536
[5] Kullock R, Ochs M, Grimm P, Emmerling M and Hecht B 2020 Nat. Commun. 11 115
[6] Du W, Wang T, Chu H-S and Nijhuis C A 2017 Nat. Photon. 11 623
[7] Lambe J and McCarthy S L 1976 Phys. Rev. Lett. 37 923
[8] Shafir D, Soifer H, Bruner B D, Dagan M, Mairesse Y, Patchkovskii S, Ivanov M Y, Smirnova O and Dudovich N 2012 Nature 485 343
[9] Zhang Y, Chen W, Fu T, Sun J, Zhang D, Li Y, Zhang S and Xu H 2019 Nano Lett. 19 6284
[10] Chen C, Bobisch C and Ho W 2009 Science 325 981
[11] Dong Z C, Zhang X L, Gao H Y, Luo Y, Zhang C, Chen L G, Zhang R, Tao X, Zhang Y, Yang J L and Hou J G 2009 Nat. Photon. 4 50
[12] Bharadwaj P, Bouhelier A and Novotny L 2011 Phys. Rev. Lett. 106 226802
[13] Krane N, Lotze C, Läger J M, Reecht G and Franke K J 2016 Nano Lett. 16 5163
[14] Parzefall M, Bharadwaj P, Jain A, Taniguchi T, Watanabe K and Novotny L 2015 Nat. Nanotechnol. 10 1058
[15] Kern J, Kullock R, Prangsma J, Emmerling M, Kamp M and Hecht B 2015 Nat. Photon. 9 582
[16] Namgung S, Mohr D A, Yoo D, Bharadwaj P, Koester S J and Oh S H 2018 ACS Nano 12 2780
[17] Qian H L, Hsu S W, Gurunatha K, Riley C T, Zhao J, Lu D, Tao A R and Liu Z W 2018 Nat. Photon. 12 485
[18] Gurunarayanan S P, Verellen N, Zharinov V S, James Shirley F, Moshchalkov V V, Heyns M, Van de Vondel J, Radu I P and Van Dorpe P 2017 Nano Lett. 17 7433
[19] Vardi Y, Cohen-Hoshen E, Shalem G and Bar-Joseph I 2016 Nano Lett. 16 748
[20] He X, Tang J, Hu H, Shi J, Guan Z, Zhang S and Xu H 2019 ACS Photon. 6 823
[21] Qin J, Liu Y, Luo H, Jiang Z, Cai W and Wang L 2019 ACS Photon. 6 2392
[22] Zhang C, Hugonin J P, Coutrot A L, Sauvan C, Marquier F and Greffet J J 2019 Nat. Commun. 10 4949
[23] Parzefall M, Szabo A, Taniguchi T, Watanabe K, Luisier M and Novotny L 2019 Nat. Commun. 10 292
[24] He X, Tang J, Hu H, Shi J, Guan Z, Zhang S and Xu H 2019 ACS Nano 13 14041
[25] Zhang G, Guo T, He X, Ai Z, Wu H and Liu C 2018 Adv. Electron. Mater. 4 1800195
[26] Cho T H, Farjam N, Allemang C R, Pannier C P, Kazyak E, Huber C, Rose M, Trejo O, Peterson R L, Barton K and Dasgupta N P 2020 ACS Nano 14 17262
[27] Li D, Cheng R, Zhou H, Wang C, Yin A, Chen Y, Weiss N O, Huang Y and Duan X 2015 Nat. Commun. 6 7509
[28] Chae H U, Ahsan R, Lin Q, Sarkar D, Rezaeifar F, Cronin S B and Kapadia R 2019 Nano Lett. 19 6227
[29] George S M 2010 Chem. Rev. 110 111
[30] Cowell E W, 3rd, Alimardani N, Knutson C C, Conley J F Jr, Keszler D A, Gibbons B J and Wager J F 2011 Adv. Mater. 23 74
[31] Periasamy P, Guthrey H L, Abdulagatov A I, Ndione P F, Berry J J, Ginley D S, George S M, Parilla P A and O'Hayre R P 2013 Adv. Mater. 25 1301
[32] Kirtley J, Theis T N and Tsang J C 1981 Phys. Rev. B 24 5650
[33] Sze S M and Ng K K 2006 Physics of semiconductor devices (John Wiley & Sons)
[34] Grover S and Moddel G 2012 Solid-State Electronics 67 94
[35] Aydinoglu F, Alhazmi M, Cui B, Ramahi O, Irannejad M and Yavuz M 2014
[36] Tien T C, Pan F M, Wang L P, Lee C H, Tung Y L, Tsai S Y, Lin C, Tsai F Y and Chen S J 2009 Nanotechnology 20 305201
[37] Parzefall M and Novotny L 2018 ACS Photon. 5 4195
[38] Liu Y, Guo J, Zhu E, Liao L, Lee S J, Ding M, Shakir I, Gambin V, Huang Y and Duan X 2018 Nature 557 696
[39] Uskov A V, Khurgin J B, Protsenko I E, Smetanin I V and Bouhelier A 2016 Nanoscale 8 14573
[40] Johnson P B and Christy R W 1972 Phys. Rev. B 6 4370

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

RichHTML

PDF (PC)

赞

补充材料

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801.
[2]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[3]	Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition[J]. 中国物理B, 2022, 31(5): 57701-057701.
[4]	Sudipta Biswas, Roksana Khanam Rumi, Tasnia Rahman Raima, Saikat Chandra Das, and M R C Mahdy. On chip chiral and plasmonic hybrid dimer or tetramer: Generic way to reverse longitudinal and lateral optical binding forces[J]. 中国物理B, 2022, 31(5): 54202-054202.
[5]	Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.
[6]	Ran Huang(黄冉), Jiaming Zhang(张家明), Fangfang Xu(徐芳芳), Jie Liu(刘杰), Huijun Yao(姚会军), Yonghui Chen(陈永辉), and Jinglai Duan(段敬来). Ion track-based nanowire arrays with gradient and programmable diameters towards rational light management[J]. 中国物理B, 2021, 30(8): 86105-086105.
[7]	Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition[J]. 中国物理B, 2021, 30(5): 50703-050703.
[8]	常爱玲, 毛亦琛, 黄志伟, 洪海洋, 徐剑芳, 黄巍, 陈松岩, 李成. Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films[J]. 中国物理B, 2020, 29(3): 38102-038102.
[9]	陈平, 赵德刚, 江德生, 杨静, 朱建军, 刘宗顺, 刘炜, 梁锋, 刘双韬, 邢瑶, 张立群. Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift[J]. 中国物理B, 2020, 29(3): 34206-034206.
[10]	陈乐易, 宗振兴, 高锦龙, 唐少龙, 都有为. Surface plasmon polaritons generated magneto-optical Kerr reversal in nanograting[J]. 中国物理B, 2019, 28(8): 83302-083302.
[11]	郭敬书, 戴道锌. Silicon nanophotonics for on-chip light manipulation[J]. 中国物理B, 2018, 27(10): 104208-104208.
[12]	侯彩霞, 郑新和, 贾锐, 陶科, 刘三姐, 姜帅, 张鹏飞, 孙恒超, 李永涛. Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide[J]. 中国物理B, 2017, 26(9): 98103-098103.
[13]	李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 马紫光, 吴海燕, 王禄, 贾海强, 王文新, 陈弘. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure[J]. 中国物理B, 2017, 26(8): 87311-087311.
[14]	樊继斌, 刘红侠, 段理, 张研, 于晓晨. Influences of different oxidants on characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition[J]. 中国物理B, 2017, 26(6): 67701-067701.
[15]	樊继斌, 刘红侠, 孙斌, 段理, 于晓晨. Performance and reliability improvement of La₂O₃/Al₂O₃ nanolaminates using ultraviolet ozone post treatment[J]. 中国物理B, 2017, 26(5): 57702-057702.