中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97803-097803.doi: 10.1088/1674-1056/abf10c
Chen Yue(岳琛)1,2,3, Xian-Sheng Tang(唐先胜)1,2,3, Yang-Feng Li(李阳锋)1, Wen-Qi Wang(王文奇)1, Xin-Xin Li(李欣欣)1,2,3, Jun-Yang Zhang(张珺玚)1,2,3, Zhen Deng(邓震)1, Chun-Hua Du(杜春花)1, Hai-Qiang Jia(贾海强)1,3,4, Wen-Xin Wang(王文新)1,3,4, Wei Lu(陆卫)5, Yang Jiang(江洋)1,†, and Hong Chen(陈弘)1,3,4,‡
Chen Yue(岳琛)1,2,3, Xian-Sheng Tang(唐先胜)1,2,3, Yang-Feng Li(李阳锋)1, Wen-Qi Wang(王文奇)1, Xin-Xin Li(李欣欣)1,2,3, Jun-Yang Zhang(张珺玚)1,2,3, Zhen Deng(邓震)1, Chun-Hua Du(杜春花)1, Hai-Qiang Jia(贾海强)1,3,4, Wen-Xin Wang(王文新)1,3,4, Wei Lu(陆卫)5, Yang Jiang(江洋)1,†, and Hong Chen(陈弘)1,3,4,‡
摘要: The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials. Recently, great enhancement has been observed in the absorption of the active region within a p-n junction. In this paper, GaAs based p-i-n samples with the active region varied from 100 nm to 3 μ were fabricated and it was observed that the external quantum efficiencies are higher than the typical results, indicating a new mechanism beyond the established theories. We proposed a theoretical model about the abnormal optical absorption process in the active region within a strong electric field, which might provide new theories for the design of the solar cells, photodetectors, and other photoelectric devices.
中图分类号: (III-V semiconductors)