A comparative study on radiation reliability of composite channel InP high electron mobility transistors

doi:10.1088/1674-1056/abe2fd

中国物理B ›› 2021, Vol. 30 ›› Issue (7): 70702-070702.doi: 10.1088/1674-1056/abe2fd

A comparative study on radiation reliability of composite channel InP high electron mobility transistors

Jia-Jia Zhang(张佳佳)¹, Peng Ding(丁芃)², Ya-Nan Jin(靳雅楠)¹, Sheng-Hao Meng(孟圣皓)¹, Xiang-Qian Zhao(赵向前)¹, Yan-Fei Hu(胡彦飞)³, Ying-Hui Zhong(钟英辉)^1,†, and Zhi Jin(金智)²

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 Microelectronics Institute, Xidian University, Xi'an 710071, China

收稿日期:2020-11-03 修回日期:2021-01-07 接受日期:2021-02-04 出版日期:2021-06-22 发布日期:2021-07-09
通讯作者: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11775191), the Natural Science Foundation of Henan Province, China (Grant No. 202300410379), the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017), Key Technologies Research and Development Program of Henan Province, China (Grant No.202102210321), and the Promotion Project for Physics Discipline in Zhengzhou University, China (Grant No. 2018WLTJ01).

A comparative study on radiation reliability of composite channel InP high electron mobility transistors

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 Microelectronics Institute, Xidian University, Xi'an 710071, China

Received:2020-11-03 Revised:2021-01-07 Accepted:2021-02-04 Online:2021-06-22 Published:2021-07-09
Contact: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11775191), the Natural Science Foundation of Henan Province, China (Grant No. 202300410379), the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017), Key Technologies Research and Development Program of Henan Province, China (Grant No.202102210321), and the Promotion Project for Physics Discipline in Zhengzhou University, China (Grant No. 2018WLTJ01).

摘要/Abstract

摘要： This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, the direct current (DC) and radio frequency (RF) characteristics and their reliability between the single channel structure and the composite channel structure after 75-keV proton irradiation are compared in detail. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.

关键词: proton irradiation, composite channel, InP HEMTs, TCAD modeling

Abstract: This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, the direct current (DC) and radio frequency (RF) characteristics and their reliability between the single channel structure and the composite channel structure after 75-keV proton irradiation are compared in detail. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.

Key words: proton irradiation, composite channel, InP HEMTs, TCAD modeling

中图分类号: (Computer modeling and simulation)

07.05.Tp

72.80.Ey (III-V and II-VI semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 95.30.Gv (Radiation mechanisms; polarization)

Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智). A comparative study on radiation reliability of composite channel InP high electron mobility transistors[J]. 中国物理B, 2021, 30(7): 70702-070702.

参考文献

[1] Sengupta K, Nagatsuma T and Mittleman D M 2018 Nat. Electron. 1 622
[2] Chen Z, Ma X Y, Zhang B, Zhang Y X, Niu Z Q, Kuang N Y, Chen W J, Li L X and Li S Q 2019 China Commun. 16 1
[3] Ma L H, Han W H and Yang F H 2020 Chin. Phys. B 29 038104
[4] Ma L H, Han W H, Zhao X S, Guo Y Y, Dou Y M and Yang F H 2018 Chin. Phys. B 27 088106
[5] Lei S G, Ma L L, Li M K, Peng W, Zhong Y H, Su Y F and Duan Z Y 2018 J. Phys. D: Appl. Phys. 51 185603
[6] Mei X B, Yoshida W, Lange M, Lee J, Zhou J, Liu P H, Leong K, Zamora A, Padilla J, Sarkozy S, Lai R and Deal W R 2015 IEEE Electron Dev. Lett. 36 327
[7] Cha E J, Wadefalk N, Moschetti G, Pourkabirian A, Stenarson J and Grahn J 2020 IEEE Electron Dev. Lett. 41 1005
[8] Cha E J, Moschetti G, Wadefalk N, Nilsson P A, Bevilacqua S, Pourkabirian A, Starski P and Grahn J 2017 IEEE T. Microw. Theory 65 5171
[9] Alt A R, Bolognesi C R, Gallego J D, Diez C, Lopez-Fernandez I and Barcia A 2011 International Conference on Indium Phosphide and Related Materials, May 22-26, 2011, Berlin, Germany, p. 1
[10] Ajayan J, Nirmal D, Ravichandran T, Mohankumar P, Prajoon P, Arivazhagan L and Sarkar C K 2018 Int. J. Electron. Commun. (AE) 94 199
[11] Zhang Z, Cardwell D, Sasikumar A, Kyle E C H, Chen J, Zhang E X, Fleetwood D M, Schrimpf R D, Speck J S, Arehart A R and Ringel S A 2016 J. Appl. Phys. 119 165704
[12] Lee I H, Polyakov A Y, Yakimov E B, Smirnov N B, Shchemerov I V, Tarelkin S A, Didenko S I, Tapero K I, Zinovyev R A and Pearton S J 2017 Appl. Phys. Lett. 110 112102
[13] Chen J, Zhang E X, Zhang C X, McCurdy M W, Fleetwood D M, Schrimpf R D, Kaun S W, Kyle E C H and Speck J S 2014 IEEE Trans. Nucl. Sci. 61 2959
[14] Petitdidier S, Guhel Y, Trolet J L, Mary P, Gaquiere C and Boudart B 2019 IEEE Trans. Nucl. Sci. 66 810
[15] Meneghini M, Tajalli A, Moens P, Banerjee A, Stockman A, Tack M, Gerardin S, Bagatin M, Paccagnella A, Zanoni E and Meneghesso G 2017 IEEE International Electron Devices Meeting, December 2-6, 2017, San Francisco, USA, p. 753
[16] Sasaki H, Hisaka T, Kadoiwa K, Oku T, Onoda S, Ohshima T, Taguchi E and Yasuda H 2018 Microelectron. Reliab. 81 312
[17] Zheng X F, Dong S S, Ji P, Wang C, He Y L, Lv L, Ma X H and Hao Y 2018 Appl. Phys. Lett. 112 233504
[18] Zhang D L, Chen X H, Shen L Y, Zheng L, Gu Z Y, Liu X B and Yu Y H 2019 IEEE Trans. Electron Dev. 66 2215
[19] Weaver B D, Martin P A, Boos J B and Cress C D 2012 IEEE Trans. Nucl. Sci. 59 3077
[20] Weaver B D, Boos J B, Papanicolaou N A, Bennett B R, Park D and Bass R 2005 Appl. Phys. Lett. 87 173501
[21] Jackson E M, Weaver B D, Shojah-Ardalan S, Wilkins R, Seabaugh A C and Brar B 2001 Appl. Phys. Lett. 79 2279
[22] Sun S X, Liu H H, Yang B, Chang M M, Zhong Y H, Li Y X, Ding P, Jin Z and Wei Z C 2020 Mater. Sci. Semicond. Proc. 114 105084
[23] Sun S X, Ji H F, Yao H J, Li S, Jin Z, Ding P and Zhong Y H 2016 Chin. Phys. B 25 108501
[24] Sun S X, Ma L H, Cheng C, Zhang C, Zhong Y H, Li Y X, Ding P and Jin Z 2017 Phys. Status Solidi A 214 1700322
[25] Zhong Y H, Yang B, Chang M M, Ding P, Ma L H, Li M K, Duan Z Y, Yang J, Jin Z and Wei Z C 2020 Chin. Phys. B 29 38502
[26] Kalavagunta A, Touboul A, Shen L, Schrimpf R D, Reed R A, Fleetwood D M, Jain R K and Mishra U K 2008 IEEE Trans. Nucl. Sci. 66 810
[27] Sun S X, Chang M M, Li M K, Ma L H, Zhong Y H, Li Y X, Ding P, Jin Z and Wei Z C 2019 Chin. Phys. B 28 078501
[28] Ruiz D C, Saranovac T, Han D, Hambitzer A, Arabhavi A M, Ostinelli O and Bolognesi C R 2019 IEEE Trans. Electron Dev. 66 4685
[29] Yamashita Y, Endoh A, Shinohara K, Hikosaka K, Matsui T, Hiyamizu S and Mimura T 2002 IEEE Electron Dev. Lett. 23 573
[30] Jun B and Subramanian S 2002 IEEE Trans. Nucl. Sci. 49 3222
[31] Gaudreau F, Fournier P, Carlone C, Khanna S M, Tang H P, Webb J and Houdayer A 2002 IEEE Trans. Nucl. Sci. 49 2702
[32] Zhao J 1990 IEEE Trans. Electron Dev. 37 2158

A comparative study on radiation reliability of composite channel InP high electron mobility transistors

A comparative study on radiation reliability of composite channel InP high electron mobility transistors

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 10

Metrics

本文评价

推荐阅读 0

[1]	Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(8): 86106-086106.
[2]	Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生). Evolution of optical properties and molecular structure of PCBM films under proton irradiation[J]. 中国物理B, 2022, 31(5): 57102-057102.
[3]	Xin Lou(娄辛), Rui Liu(刘锐), Ke Chen(陈科), Xin Zhou(周昕), Rudolf Podgornik, and Mingcheng Yang(杨明成). Diffusion of a chemically active colloidal particle in composite channels[J]. 中国物理B, 2022, 31(4): 44704-044704.
[4]	Yu Zhao(赵瑜), Wen-Yue Zhao(赵文悦), Dan-Dan Ju(琚丹丹), Yue-Yue Yao(姚月月), Hao Wang(王豪), Cheng-Yue Sun(孙承月), Ya-Zhou Peng(彭亚洲), Yi-Yong Wu(吴宜勇), and Wei-Dong Fei(费维栋). Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films[J]. 中国物理B, 2021, 30(10): 107702-107702.
[5]	钟英辉, 杨博, 常明铭, 丁芃, 马刘红, 李梦珂, 段智勇, 杨洁, 金智, 魏志超. Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane[J]. 中国物理B, 2020, 29(3): 38502-038502.
[6]	魏佳男, 贺朝会, 李培, 李永宏, 郭红霞. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor[J]. 中国物理B, 2019, 28(7): 76106-076106.
[7]	孙树祥, 魏志超, 夏鹏辉, 王文斌, 段智勇, 李玉晓, 钟英辉, 丁芃, 金智. Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs[J]. 中国物理B, 2018, 27(2): 28502-028502.
[8]	叶兵, 刘杰, 王铁山, 刘天奇, 罗捷, 王斌, 殷亚楠, 姬庆刚, 胡培培, 孙友梅, 侯明东. Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell[J]. 中国物理B, 2017, 26(8): 88501-088501.
[9]	李兴冀, 刘超铭, 孙中亮, 肖立伊, 何世禹. Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions[J]. 中国物理B, 2013, 22(9): 98501-098501.
[10]	程秀围, 关庆丰, 范鲜红, 陈波. Effect of vacancy defect clusters on the optical property of the aluminium filter used for the space solar telescope[J]. 中国物理B, 2010, 19(1): 16103-016103.