中国物理B ›› 2021, Vol. 30 ›› Issue (3): 36103-.doi: 10.1088/1674-1056/abccb3

• • 上一篇    下一篇

  

  • 收稿日期:2020-09-02 修回日期:2020-11-11 接受日期:2020-11-23 出版日期:2021-02-22 发布日期:2021-03-05

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

Li-Hua Mo(莫莉华)1,2, Bing Ye(叶兵)1,2,†, Jie Liu(刘杰)1,2,‡, Jie Luo(罗捷)1,2, You-Mei Sun(孙友梅)1,2, Chang Cai(蔡畅)1,2, Dong-Qing Li(李东青)1,2, Pei-Xiong Zhao(赵培雄)1,2, and Ze He(贺泽)1,2   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2020-09-02 Revised:2020-11-11 Accepted:2020-11-23 Online:2021-02-22 Published:2021-03-05
  • Contact: †Corresponding author. E-mail: yebing@impcas.ac.cn ‡Corresponding author. E-mail: j.liu@impcas.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 111690041, and 11675233) and the Project of Science and Technology on Analog Integrated Circuit Laboratory, China ((Grant No. 6142802WD201801).

RichHTML

1

PDF (PC)

91

赞

Abstract: Three-dimensional integrated circuits (3D ICs) have entered into the mainstream due to their high performance, high integration, and low power consumption. When used in atmospheric environments, 3D ICs are irradiated inevitably by neutrons. In this paper, a 3D die-stacked SRAM device is constructed based on a real planar SRAM device. Then, the single event upsets (SEUs) caused by neutrons with different energies are studied by the Monte Carlo method. The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV. The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent, but the specific values are different. The SEU cross-section is shown to be dependent on the threshold of linear energy transfer ($\mathrmLET_\rm th$) and thickness of the sensitive volume ($\mathrmT_\rm sv$). The secondary particle distribution and energy deposition are analyzed, and the internal mechanism that is responsible for this difference is illustrated. Besides, the ratio and patterns of multiple bit upset (MBU) caused by neutrons with different energies are also presented. This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.

Key words: neutron, three-dimension ICs, single event upset, multi-bit upset, Geant4

中图分类号:  (Semiconductors)

  • 61.82.Fk
61.80.Jh (Ion radiation effects) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)