中国物理B ›› 2021, Vol. 30 ›› Issue (10): 106101-106101.doi: 10.1088/1674-1056/ac1f03

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Doping effect on the structure and physical properties of quasi-one-dimensional compounds Ba9Co3(Se1-xSx)15 (x = 0-0.2)

Lei Duan(段磊)1, Xian-Cheng Wang(望贤成)2,3,†, Jun Zhang(张俊)2,3, Jian-Fa Zhao(赵建发)2,3, Wen-Min Li(李文敏)2,3, Li-Peng Cao(曹立朋)2,3, Zhi-Wei Zhao(赵志伟)1, Changjiang Xiao(肖长江)1, Ying Ren(任瑛)1, Shun Wang(王顺)1, Jinlong Zhu(朱金龙)4,‡, and Chang-Qing Jin(靳常青)2,3,5,§   

  1. 1 School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
    4 Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;
    5 Materials Research Laboratory at Songshan Lake, Dongguan 523808, China
  • 收稿日期:2021-06-07 修回日期:2021-07-30 接受日期:2021-08-19 出版日期:2021-09-17 发布日期:2021-09-17
  • 通讯作者: Xian-Cheng Wang, Jinlong Zhu, Chang-Qing Jin E-mail:wangxiancheng@iphy.ac.cn;zhujl@sustech.edu.cn;jin@iphy.ac.cn
  • 基金资助:
    Project supported by the Doctoral Fund of Henan University of Technology (Grant No. 2020BS029), the National Key R&D Program of China (Grant Nos. 2018YFA0305700 and 2017YFA0302900), the National Natural Science Foundation of China (Grant Nos. 11974410 and 11820101003), and the Stable Support Plan Program of Shenzhen Natural Science Fund (Grant No. 20200925152415003).

Doping effect on the structure and physical properties of quasi-one-dimensional compounds Ba9Co3(Se1-xSx)15 (x = 0-0.2)

Lei Duan(段磊)1, Xian-Cheng Wang(望贤成)2,3,†, Jun Zhang(张俊)2,3, Jian-Fa Zhao(赵建发)2,3, Wen-Min Li(李文敏)2,3, Li-Peng Cao(曹立朋)2,3, Zhi-Wei Zhao(赵志伟)1, Changjiang Xiao(肖长江)1, Ying Ren(任瑛)1, Shun Wang(王顺)1, Jinlong Zhu(朱金龙)4,‡, and Chang-Qing Jin(靳常青)2,3,5,§   

  1. 1 School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
    4 Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;
    5 Materials Research Laboratory at Songshan Lake, Dongguan 523808, China
  • Received:2021-06-07 Revised:2021-07-30 Accepted:2021-08-19 Online:2021-09-17 Published:2021-09-17
  • Contact: Xian-Cheng Wang, Jinlong Zhu, Chang-Qing Jin E-mail:wangxiancheng@iphy.ac.cn;zhujl@sustech.edu.cn;jin@iphy.ac.cn
  • Supported by:
    Project supported by the Doctoral Fund of Henan University of Technology (Grant No. 2020BS029), the National Key R&D Program of China (Grant Nos. 2018YFA0305700 and 2017YFA0302900), the National Natural Science Foundation of China (Grant Nos. 11974410 and 11820101003), and the Stable Support Plan Program of Shenzhen Natural Science Fund (Grant No. 20200925152415003).

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摘要： A series of samples of Ba9Co3(Se1-xSx)15 (x = 0, 0.05, 0.1, 0.15, 0.2) with quasi-one-dimensional (1D) structure were successfully synthesized under high-temperature and high-pressure conditions. The influence of partial substitution of S for Se on the structure, electronic transport, and magnetic properties of Ba9Co3(Se1-xSx)15 has been investigated in detail. The x-ray diffraction data shows that the lattice constant decreases linearly with increasing S-doping level, which follows the Vegrad's law. The doped S atoms preferentially occupy the site of Se atoms in CoSe6 octahedron. Physical properties measurements indicate that all the samples of Ba9Co3(Se1-xSx)15 are semiconducting and display spin glass behavior. As the replacement of Se by smaller size S, although the inter-chain distance decreases, the electronic hopping between CoSe/S6 chains is weakened and leads to an increase of band gap from 0.75 eV to 0.86 eV, since the S-3p electrons are more localized than Se-4p ones. Ba9Co3(Se1-xSx)15 exhibits 1D conducting chain characteristic.

关键词: doping effect, one-dimensional chain, spin glass, high-pressure synthesis

Abstract: A series of samples of Ba9Co3(Se1-xSx)15 (x = 0, 0.05, 0.1, 0.15, 0.2) with quasi-one-dimensional (1D) structure were successfully synthesized under high-temperature and high-pressure conditions. The influence of partial substitution of S for Se on the structure, electronic transport, and magnetic properties of Ba9Co3(Se1-xSx)15 has been investigated in detail. The x-ray diffraction data shows that the lattice constant decreases linearly with increasing S-doping level, which follows the Vegrad's law. The doped S atoms preferentially occupy the site of Se atoms in CoSe6 octahedron. Physical properties measurements indicate that all the samples of Ba9Co3(Se1-xSx)15 are semiconducting and display spin glass behavior. As the replacement of Se by smaller size S, although the inter-chain distance decreases, the electronic hopping between CoSe/S6 chains is weakened and leads to an increase of band gap from 0.75 eV to 0.86 eV, since the S-3p electrons are more localized than Se-4p ones. Ba9Co3(Se1-xSx)15 exhibits 1D conducting chain characteristic.

Key words: doping effect, one-dimensional chain, spin glass, high-pressure synthesis

中图分类号:  (X-ray diffraction)

  • 61.05.cp
75.50.Lk (Spin glasses and other random magnets) 61.66.Fn (Inorganic compounds) 61.82.Fk (Semiconductors)