中国物理B ›› 2021, Vol. 30 ›› Issue (2): 28501-0.doi: 10.1088/1674-1056/abb7fc

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  • 收稿日期:2020-07-22 修回日期:2020-09-01 接受日期:2020-09-14 出版日期:2021-01-18 发布日期:2021-01-26

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance

Shun Li(李顺)1, Jin-Sha Zhang(张金沙)1, Wei-Zhong Chen(陈伟中)1,2,†, Yao Huang(黄垚)1, Li-Jun He(贺利军)1, and Yi Huang(黄义)1   

  1. 1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China; 2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2020-07-22 Revised:2020-09-01 Accepted:2020-09-14 Online:2021-01-18 Published:2021-01-26
  • Contact: †Corresponding author. E-mail: cwz@cqu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61604027 and 61704016) and the Fund from Chongqing Technology Innovation and Application Development (Key Industry Research and Development), China (Grant No. cstc2018jszx-cyzd0646).

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Abstract: A novel shorted anode lateral-insulated gate bipolar transistor (SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier V barrier and resistance R SA in anode, named CBR LIGBT. The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the V barrier and R SA can be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path (N-buffer/P-float/polysilicon layer /N-float) can quickly extract the electrons in the N-drift, which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same V on of 1.3 V, the E off of the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same E off of 1.5 mJ/cm2, the CBR LIGBT achieves the lowest V on of 1.1 V compared with the other LIGBTs.

Key words: shorted anode lateral-insulated gate bipolar transistor, snapback, barrier, trade-off

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)