中国物理B ›› 2021, Vol. 30 ›› Issue (2): 27301-0.doi: 10.1088/1674-1056/abc0dd

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  • 收稿日期:2020-07-14 修回日期:2020-09-21 接受日期:2020-10-14 出版日期:2021-01-18 发布日期:2021-01-26

Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

Tao Fang(房涛)1, Ling-Qi Li(李灵琪)1, Guang-Rui Xia(夏光睿)1,2,†, and Hong-Yu Yu(于洪宇)1,‡   

  1. 1 School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; 2 Department of Materials Engineering, the University of British Columbia, Vancouver, British Columbia, V6T1Z4, Canada
  • Received:2020-07-14 Revised:2020-09-21 Accepted:2020-10-14 Online:2021-01-18 Published:2021-01-26
  • Contact: †Corresponding author. E-mail: gxia@mail.ubc.ca ‡Corresponding author. E-mail: yuhy@sustech.edu.cn

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Abstract: With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.

Key words: technology computer-aided design (TCAD), gallium oxide (Ga2O3), gallium nitride (GaN), Schottky barrier diode (SBD)

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
64.70.kg (Semiconductors) 61.72.uj (III-V and II-VI semiconductors) 85.30.-z (Semiconductor devices)