High performance InAlN/GaN high electron mobility transistors for low voltage applications
宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃
High performance InAlN/GaN high electron mobility transistors for low voltage applications
Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃)
中国物理B
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2020, (5): 57307
-057307
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DOI: 10.1088/1674-1056/ab821e